The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
INCH-POUND
MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C and ratings apply to all case outlines.
Col. 1
Type
Col. 2
V
(BR)
Col. 3
V
RWM
and
V
(BR)min
Col. 4
I
O1
T
L
= +55°C;
L = .375 inch
(1) (2) (3)
A dc
5
5
5
5
5
Col. 5
I
FSM
I
O
= 2 A dc
t
p
= 1/120 s
T
A
= +55°C
A(pk)
100
100
100
100
100
Col. 6
T
J
Col. 7
I
O2
T
A
=
+55°C
(2) (4)
A dc
3
3
3
3
3
Col. 8
T
STG
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
V dc
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
200
400
600
800
1,000
200
400
600
800
1,000
°C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
°C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
(1) Derate linearly at 41.6 mA/°C above T
L
= +55°C at L = .375 inch (9.53 mm).
(2) An I
O
of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554
- 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/°C above T
A
= +55°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconduction@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/420H
1.4 Primary electrical characteristics. Unless otherwise specified, T
A
= +25°C.
I
R2
at T
A
= +100°C
Type
V
f
at I
f
= 9.0 A(pk)
1 percent duty cycle,
8.3 ms max pulse width
Min V(pk)
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
0.6
0.6
0.6
0.6
0.6
Max V(pk)
1.2
1.2
1.2
1.3
1.3
I
R1
R
θ
JL
R
θ
JEC
µA
dc (max) at V
R
(V dc)
1.0
1.0
1.0
1.0
1.0
200
400
600
800
1,000
µA
dc (max) at V
R
(V dc)
75
75
75
75
75
200
400
600
800
1,000
See (1)
(1) R
θ
JL
≤
22°C/W for L = .375 inch (9.52 mm).
R
θ
JEC
≤
11°C/W for L = 0 (US version).
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
www.dodssp.dap.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/420H
Dimensions
Ltr
Inches
Min
BL
BD
LD
LL
LU
.130
.115
.037
.900
Max
.300
.180
.042
1.300
.050
Millimeters
Min
3.30
2.92
0.94
22.86
Max
7.62
4.57
1.07
33.02
1.27
3
3, 4
Notes
NOTES:
1.
Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
Dimensions BL and BD include all components of the diode periphery
except the sections of leads over which the diameter is controlled.
4.
Dimension BD shall be measured at the largest diameter.
5.
Dimension LU shall include the sections of the lead over
which the diameter is uncontrolled. This uncontrolled area
is defined as the zone between the edge of the diode body
and extending .050 inch (1.27 mm) onto the leads.
6.
In accordance with ASME Y14.5M, diameters are
equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554, (similar to DO-41).
3
MIL-PRF-19500/420H
Dimensions
Ltr
Inches
Min
BL
BD
ECT
S
.200
.137
.019
.003
Max
.275
.180
.034
Millimeters
Min
5.08
3.48
0.48
0.08
Max
6.99
4.57
0.86
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions of 1N5550US through 1N5554US.
4
MIL-PRF-19500/420H
Ltr
Dimensions
Inches
Min
Max
.091
.078
.014
Millimeters
Min
2.16
1.83
0.20
Max
2.31
1.98
0.36
A
B
C
.085
.072
.008
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics are:
Top (cathode) Au Thickness = 10,000Å minimum,
Back (anode) Au Thickness = 4,000Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 3. JANHCA and JANKCA (A-version) die dimensions.
5
NXP MCU
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