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JANTX1N4948

产品描述1 A, SILICON, SIGNAL DIODE
产品类别分立半导体    二极管   
文件大小181KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
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JANTX1N4948概述

1 A, SILICON, SIGNAL DIODE

JANTX1N4948规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-41
包装说明O-XALF-W2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JESD-30 代码O-XALF-W2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
参考标准MIL-19500/359F
最大重复峰值反向电压1000 V
最大反向恢复时间0.5 µs
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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1N4942 thru 1N4948
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5615 thru 1N5623 series where surface mount MELF
package configurations are also available by adding a “US” suffix (see separate
data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“A” Package
FEATURES
Popular JEDEC registered 1N4942 to 1N4948 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/359 (for JANS, see 1N5615 thru 1N5623)
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 38
o
C/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC and 0.750 Amps at T
A
= 100ºC
Forward Surge Current: 15 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
MINIMUM
PEAK
BREAKDOWN
REVERSE
VOLTAGE
VOLTAGE
B
V
@ 50µA
V
RWM
VOLTS
VOLTS
200
400
600
800
1000
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
AMPS
o
o
55 C
100 C
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
MAXIMUM
FORWARD
VOLTAGE
V
F
@ 1 A
VOLTS
1.3
1.3
1.3
1.3
1.3
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
µA
o
o
25 C
150 C
1.0
200
1.0
200
1.0
200
1.0
200
1.0
200
Maximum
CAPACITANCE
C @ -12V
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
(NOTE 1)
I
FSM
AMPS
15
15
15
15
15
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
t
rr
ns
150
150
250
250
500
1N4942 thru 1N4948
NOTE 1:
T
A
= 100
o
C, 8.3 ms surges
JAN1N4942
JAN1N4944
JAN1N4946
JAN1N4947
JAN1N4948
NOTE 2:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= .250A
Copyright
2004
12-08-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

JANTX1N4948相似产品对比

JANTX1N4948 JANTX1N4944 10051014S95 JANTX1N4947
描述 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE MARC REMOVABLE PIN&SOCKET CONTACTS 1 A, 800 V, SILICON, SIGNAL DIODE
是否Rohs认证 不符合 不符合 - 不符合
厂商名称 Microsemi Microsemi - Microsemi
零件包装代码 DO-41 DO-41 - DO-41
包装说明 O-XALF-W2 O-XALF-W2 - O-XALF-W2
针数 2 2 - 2
Reach Compliance Code compli not_compliant - compli
ECCN代码 EAR99 EAR99 - EAR99
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED - METALLURGICALLY BONDED
外壳连接 ISOLATED ISOLATED - ISOLATED
配置 SINGLE SINGLE - SINGLE
二极管元件材料 SILICON SILICON - SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 代码 O-XALF-W2 O-XALF-W2 - O-XALF-W2
JESD-609代码 e0 e0 - e0
元件数量 1 1 - 1
端子数量 2 2 - 2
最大输出电流 1 A 1 A - 1 A
封装主体材料 UNSPECIFIED UNSPECIFIED - UNSPECIFIED
封装形状 ROUND ROUND - ROUND
封装形式 LONG FORM LONG FORM - LONG FORM
认证状态 Not Qualified Qualified - Not Qualified
参考标准 MIL-19500/359F MIL-19500/359F - MIL-19500/359F
最大反向恢复时间 0.5 µs 0.15 µs - 0.25 µs
表面贴装 NO NO - NO
端子面层 TIN LEAD Tin/Lead (Sn/Pb) - TIN LEAD
端子形式 WIRE WIRE - WIRE
端子位置 AXIAL AXIAL - AXIAL

 
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