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Datasheet> 器件分类 > 存储> IS64WV51232BLL-10BA3

IS64WV51232BLL-10BA3: 产品描述512K X 32 STANDARD SRAM, 10 ns, PBGA90; 产品类别存储; 文件大小217KB，共19页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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IS64WV51232BLL-10BA3概述

512K X 32 STANDARD SRAM, 10 ns, PBGA90

512K × 32 标准存储器, 10 ns, PBGA90

IS64WV51232BLL-10BA3规格参数

参数名称	属性值
功能数量	1
端子数量	90
最小工作温度	-40 Cel
最大工作温度	125 Cel
额定供电电压	3.3 V
最小供电/工作电压	2.4 V
最大供电/工作电压	3.6 V
加工封装描述	8 X 13 MM, 0.80 MM PITCH, BGA-90
each_compli	Yes
状态	Active-Unconfirmed
ccess_time_max	10 ns
jesd_30_code	R-PBGA-B90
jesd_609_code	e0
存储密度	1.68E7 bit
内存IC类型	STANDARD SRAM
内存宽度	32
moisture_sensitivity_level	3
位数	524288 words
位数	512K
操作模式	ASYNCHRONOUS
组织	512KX32
包装材料	PLASTIC/EPOXY
ckage_code	LFBGA
包装形状	RECTANGULAR
包装尺寸	GRID ARRAY, LOW PROFILE, FINE PITCH
串行并行	PARALLEL
eak_reflow_temperature__cel_	NOT SPECIFIED
qualification_status	COMMERCIAL
seated_height_max	1.45 mm
表面贴装	YES
工艺	CMOS
温度等级	AUTOMOTIVE
端子涂层	TIN LEAD
端子形式	BALL
端子间距	0.8000 mm
端子位置	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
length	13 mm
width	8 mm

IS64WV51232BLL-10BA3相似产品对比

	IS64WV51232BLL-10BA3	IS61WV51232ALL	IS61WV51232ALL-20BI	IS61WV51232ALS	IS61WV51232BLL	IS61WV51232BLL-10BI	IS61WV51232BLS	IS64WV51232BLL	IS64WV51232BLS
描述	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90
功能数量	1	1	1	1	1	1	1	1	1
端子数量	90	90	90	90	90	90	90	90	90
最小工作温度	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
最大工作温度	125 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel
额定供电电压	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
最小供电/工作电压	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
最大供电/工作电压	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
加工封装描述	8 X 13 MM, 0.80 MM PITCH, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90
状态	Active-Unconfirmed	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
存储密度	1.68E7 bit	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg
内存IC类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	32	32	32	32	32	32	32	32	32
操作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	512KX32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
串行并行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
表面贴装	YES	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
工艺	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子涂层	TIN LEAD	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子间距	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
位数	512K	512K	512K	512K	512K	512K	512K	512K	512K
最大存取时间	-	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
无铅	-	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
欧盟RoHS规范	-	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes

IS64WV51232BLL-10BA3

IS64WV51232BLL-10BA3概述

IS64WV51232BLL-10BA3规格参数

IS64WV51232BLL-10BA3相似产品对比

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