2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
2.4 A, 500 V, 3 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA
参数名称 | 属性值 |
端子数量 | 2 |
最小击穿电压 | 500 V |
加工封装描述 | ROHS COMPLIANT, PACKAGE-3 |
无铅 | Yes |
欧盟RoHS规范 | Yes |
状态 | ACTIVE |
包装形状 | RECTANGULAR |
包装尺寸 | SMALL OUTLINE |
表面贴装 | Yes |
端子形式 | GULL WING |
端子涂层 | MATTE TIN |
端子位置 | SINGLE |
包装材料 | PLASTIC/EPOXY |
结构 | SINGLE |
壳体连接 | DRAIN |
元件数量 | 1 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
通道类型 | N-CHANNEL |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR |
操作模式 | ENHANCEMENT |
晶体管类型 | GENERAL PURPOSE POWER |
最大漏电流 | 2.4 A |
最大漏极导通电阻 | 3 ohm |
IRFR420TR | IRFR120TRLPBF | IRFR420PBF | IRFU420 | SIHFR120TL-E3 | SIHFR420T-E3 | |
---|---|---|---|---|---|---|
描述 | 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
端子数量 | 2 | 2 | 2 | - | 2 | 2 |
最小击穿电压 | 500 V | 500 V | 500 V | - | 500 V | 500 V |
加工封装描述 | ROHS COMPLIANT, PACKAGE-3 | ROHS COMPLIANT, PACKAGE-3 | ROHS COMPLIANT, PACKAGE-3 | - | ROHS COMPLIANT, PACKAGE-3 | ROHS COMPLIANT, PACKAGE-3 |
无铅 | Yes | Yes | Yes | - | Yes | Yes |
欧盟RoHS规范 | Yes | Yes | Yes | - | Yes | Yes |
状态 | ACTIVE | ACTIVE | ACTIVE | - | ACTIVE | ACTIVE |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
表面贴装 | Yes | Yes | Yes | - | Yes | Yes |
端子形式 | GULL WING | GULL WING | GULL WING | - | GULL WING | GULL WING |
端子涂层 | MATTE TIN | MATTE TIN | MATTE TIN | - | MATTE TIN | MATTE TIN |
端子位置 | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
结构 | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
壳体连接 | DRAIN | DRAIN | DRAIN | - | DRAIN | DRAIN |
元件数量 | 1 | 1 | 1 | - | 1 | 1 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | SILICON |
通道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
操作模式 | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | - | ENHANCEMENT | ENHANCEMENT |
晶体管类型 | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | - | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
最大漏电流 | 2.4 A | 2.4 A | 2.4 A | - | 2.4 A | 2.4 A |
最大漏极导通电阻 | 3 ohm | 3 ohm | 3 ohm | - | 3 ohm | 3 ohm |
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