Using the IDT CMOS Oscillator technology, originally developed by
Mobius Microsystems, the MM8203 replaces quartz crystal based
resonators and oscillators with a monolithic CMOS IC at the thinnest
possible form factors without the use of any mechanical frequency
source or PLL. The product is specially designed to work with USB
2.0/1.1 Full and Low Speed, and USB-IC (USB-InterChip) interface
controller ICs, and high density SIM-, and smart-cards.
Features
• All-CMOS Temperature Compensated Oscillator
• TimeStak
TM
: Available in die form for the thinnest and smallest
MCP options (-D package option)
• Ultra-low power operation (2mA typical at 1.8V supply)
• No quartz or PLL used: very low jitter performance leading to low
link Bit Error Rates (BER)
• Excellent reliability: Shock and vibration resistant
• Many frequencies are supported
• Factory programmable from 6 to 133MHz
Ordering Information
8203
1
-
12
2
VP
3
C
4
NSG
5
I
6
T
7
Pin Assignment
1) IDT Base Part Number
2) FF: Factory Programmed Frequency in MHz
3) Supply Voltage Configuration
•
•
•
•
•
•
•
•
•
•
•
•
•
VP: 1.8V to 3.3V continuous operation
V: 3.3V only operation
T: 2.5V only operation
P: 1.8V only operation
C: CMOS Output
-D: Wafer form 200um thickness
-C: Wafer form 350um thickness
NSG: 5x3.2, 4-Pin Package
NVG: 2.5x2.0, 4-Pin Package
No
1
Name
CE
MM8203
4-pin NSG
5mm x 3.2mm x 0.9mm
Top View
CE
1
2
VSS
Bottom View
VDD
4
3
OUT
4) Output Signal Type
5) Package Options*
Table 1. Pin Descriptions
Type
Input
Pullup
Description
Chip Enable. Internal Pullup. MM8203 is
enabled when HIGH.When LOW, OUT has
a weak pull-down to GND internally
System Ground
Frequency Output
Power Supply. Use a 0.1µF decoupling
capacitor between VDD and VSS
6) Temperature Grade
“ “: 0 to 70
o
C Commercial Temperature Range i.e. default is blank
I: -40 to 85
o
C Industrial Temperature Range
“ “: Shipped in Tube i.e. default is blank
T: Shipped in Tape & Reel
7) Tape & Reel Option
2
3
*This package is rated “Green”. Please contact factory for environmental compliancy
information.
VSS
OUT
VDD
Power
Output
Power
4
The Preliminary Information presented herein represents a product in pre-production. The noted characteristics are based on initial product characterization and/or qualification.
Integrated Device Technology, Incorporated (IDT) reserves the right to change any circuitry or specifications without notice
may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the
DC Characteristics
or
AC
Characteristics
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, VDD
Input, V
I
(CE pin)
Output, V
O
(OUT pin)
Storage Temperature
4.6V
Rating
-0.5V to VDD + 0.5V
-0.5V to VDD + 0.5V
-65
o
C to 150
o
C
Electrical Characteristics
5
[3.3V]
VDD=3.0V to 3.6V, T
A
=-40 to 85
o
C unless otherwise noted. Typical values are measured at VDD=3.3V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=3.3V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -4mA
I
OH
= 4mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “I” device
option, over -40-85
o
C range
20% to 80% x VDD. Output load (C
L
) =8pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =8pF, NSG-option
Clock output duty cycle. Measured under 80MHz, VDD/2,
C
L
=8pF
Clock output duty cycle. Measured over 80MHz, VDD/2,
C
L
=8pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
3.0
-0.3
VDD*0.7
Typ
Max
Units
V
3.3
2.5
0.2
VDD-0.5
6
3.6
VDD*0.3
VDD+0.3
3.0
1
0.5
133
+2000
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
Frequency Stability
F
TOT
+2000
1.9
1.9
45
40
400
3.5
50
-140
-135
55
60
ppm
ns
ns
%
%
µs
ps
RMS
ps
dBc/Hz
Rise Time
Fall Time
Duty Cycle
RT
FT
DC
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
t
on
PJ
RMS
CJ
PN
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8203 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
C unless otherwise noted. Typical values are measured at VDD=2.5V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=2.5V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -3mA
I
OH
= 3mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “I” device
option, over -40-85
o
C range
20% to 80% x VDD. Output load (C
L
) =7pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =7pF, NSG-option
Clock output duty cycle. Measured under 100MHz at VDD/2,
C
L
=7pF
Clock output duty cycle. Measured over 100MHz at VDD/2,
C
L
=7pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
2.25
-0.3
VDD*0.7
Typ
Max
Units
V
2.5
2.25
0.2
VDD-0.4
6
2.75
VDD*0.3
VDD+0.3
2.75
1
0.4
133
+2000
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
Frequency Stability
F
TOT
+2000
2.3
2.3
45
40
400
3.5
50
-140
-135
55
60
ppm
ns
ns
%
%
µs
ps
RMS
ps
dBc/Hz
Rise Time
Fall Time
Duty Cycle
RT
FT
DC
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
t
on
PJ
RMS
CJ
PN
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8203 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
C unless otherwise noted. Typical values are measured at VDD=1.8V, T
A
=35
o
C
Parameter
ElectroStaticDischa
rge
Supply Voltage
Input LOW level
Input HIGH level
Supply Current
Quiescent Current
Output LOW level
Output HIGH level
Output Frequency
Symbol
ESD
VDD
V
IL
V
IH
IDD
IDDQ
V
OL
V
OH
F
OUT
Conditions
Human Body Model, tested per JESD D22-A114
Normal Operation
3
CE pin
CE pin
Active supply current, VDD=1.8V, T=35oC, no output load
CE=LOW, output disabled
I
OL
= -1.8mA
I
OH
= 1.8mA
Factory Programmable.Contact IDT for frequencies not listed
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “ ” device
option, over 0-70
o
C range
Total Frequency Stability over temperature,supply
variation,aging (1st year at 35oC),shock&vibration. “I” device
option, over -40-85
o
C range
20% to 80% x VDD. Output load (C
L
) =4pF, NSG-option
80% to 20% x VDD. Output load (C
L
) =4pF, NSG-option
Clock output duty cycle. Measured at VDD/2, C
L
=4pF
Output valid time after VDD meets the specified range&CE
transition
Total RMS Period Jitter (including random and
deterministic)
1,2
The absolute value of max change in the periods of any 2
adjacent cycles
1,2,4
1MHz offset from carrier
1,2
Min
4000
1.62
-0.3
VDD*0.7
Typ
Max
Units
V
1.8
2.0
0.2
VDD-0.3
6
1.98
VDD*0.3
VDD+0.3
2.5
1
0.3
133
+2000
12,24,25,50
V
V
V
mA
µA
V
V
MHz
ppm
Frequency Stability
F
TOT
+2000
2.75
2.75
55
400
3.5
50
-140
-135
ppm
ns
ns
%
µs
ps
RMS
ps
dBc/Hz
Rise Time
Fall Time
Duty Cycle
Power-up time
Period Jitter
Cycle-cycle Jitter
Phase Noise
RT
FT
DC
t
on
PJ
RMS
CJ
PN
45
Notes 1. Measured with a 50Ω to GND termination
2: Measured at 48MHz output frequency
3. The MM8203 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V.
4. Measured over 1000 cycles per JEDEC standard 65
5. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained
transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions.
Application Diagram
Below is a representative application diagram to evaluate the MM8203. For 50Ohm terminated measurements, a balun is necessary to
概述： 介绍一种CAN-bus网络与以太网连接，构成一个中型远程监控/数据传输网络的方法。
CAN（Controller Area Network——控制器局域网）是一种由CAN控制器组成的高性能串行数据局域通信网络，是国际上应用最广泛的现场总线之一。它最早由德国Bosch公司于1984年推出，最初用于汽车内部测量与执行部件之间的数据通信。CAN-bus总线模型符合OSI的7层结构...[详细]
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
