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5962H9652601QCA

产品描述NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14
产品类别逻辑    逻辑   
文件大小499KB,共21页
制造商Cobham PLC
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5962H9652601QCA概述

NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14

5962H9652601QCA规格参数

参数名称属性值
厂商名称Cobham PLC
包装说明DIP, DIP14,.3
Reach Compliance Codeunknow
ECCN代码3A001.A.1.A
系列AC
JESD-30 代码R-GDIP-T14
JESD-609代码e0
负载电容(CL)50 pF
逻辑集成电路类型NAND GATE
最大I(ol)0.008 A
功能数量2
输入次数4
端子数量14
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装等效代码DIP14,.3
封装形状RECTANGULAR
封装形式IN-LINE
电源5 V
Prop。Delay @ Nom-Su15 ns
传播延迟(tpd)15 ns
认证状态Qualified
施密特触发器NO
筛选级别MIL-PRF-38535 Class Q
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
总剂量1M Rad(Si) V

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REVISIONS
LTR
A
B
C
DESCRIPTION
Changes in accordance with NOR 5962-R108-97. – TVN
Changes in accordance with NOR 5962-R086-98. – CFS
Add limit for linear energy threshold (LET) with no latch-up in section 1.5.
Update the boilerplate to the requirements of MIL-PRF-38535. Editorial
changes throughout. – TVN
Update boilerplate paragraphs and radiation paragraphs 4.4.4.1 – 4.4.4.4 to
the current MIL-PRF-38535 requirements. - LTG
DATE (YR-MO-DA)
96-12-10
98-03-31
05-08-24
APPROVED
Monica L. Poelking
Monica L. Poelking
Thomas M. Hess
D
12-05-17
Thomas M. Hess
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
D
15
D
16
D
17
D
18
REV
SHEET
PREPARED BY
Larry T. Gauder
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Monica L. Poelking
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DSCC FORM 2233
APR 97
DRAWING APPROVAL DATE
96-04-03
REVISION LEVEL
D
19
D
20
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
D
10
D
11
D
12
D
13
D
14
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, DIGITAL, RADIATION
HARDENED, ADVANCED CMOS, DUAL 4-INPUT
NAND GATE, MONOLITHIC SILICON
SIZE
CAGE CODE
D
A
67268
SHEET
1 OF 20
5962-96526
5962-E321-12

5962H9652601QCA相似产品对比

5962H9652601QCA 5962H9652601Q9A 5962H9652601VXC 5962H9652601QCC 5962H9652601QXC 5962H9652601QXA 5962H9652601V9A 5962H9652601VXA 5962H9652601VCC 5962H9652601VCA
描述 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, DIE-24 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDFP14, CERAMIC, DFP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDFP14, CERAMIC, DFP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDFP14, CERAMIC, DFP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, DIE-24 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDFP14, CERAMIC, DFP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14 NAND Gate, AC Series, 2-Func, 4-Input, CMOS, CDIP14, CERAMIC, DIP-14
包装说明 DIP, DIP14,.3 DIE, DIE OR CHIP DFP, FL14,.3 DIP, DIP14,.3 DFP, FL14,.3 DFP, FL14,.3 DIE, DIE OR CHIP DFP, FL14,.3 CERAMIC, DIP-14 CERAMIC, DIP-14
Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A
系列 AC AC AC AC AC AC AC AC AC AC
JESD-30 代码 R-GDIP-T14 R-XUUC-N24 R-CDFP-F14 R-GDIP-T14 R-CDFP-F14 R-CDFP-F14 R-XUUC-N24 R-CDFP-F14 R-GDIP-T14 R-GDIP-T14
JESD-609代码 e0 e0 e4 e4 e4 e0 e0 e0 e4 e0
负载电容(CL) 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF 50 pF
逻辑集成电路类型 NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE NAND GATE
最大I(ol) 0.008 A 0.0001 A 0.008 A 0.008 A 0.008 A 0.008 A 0.0001 A 0.008 A 0.008 A 0.008 A
功能数量 2 2 2 2 2 2 2 2 2 2
输入次数 4 4 4 4 4 4 4 4 4 4
端子数量 14 24 14 14 14 14 24 14 14 14
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, GLASS-SEALED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
封装代码 DIP DIE DFP DIP DFP DFP DIE DFP DIP DIP
封装等效代码 DIP14,.3 DIE OR CHIP FL14,.3 DIP14,.3 FL14,.3 FL14,.3 DIE OR CHIP FL14,.3 DIP14,.3 DIP14,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE UNCASED CHIP FLATPACK IN-LINE FLATPACK FLATPACK UNCASED CHIP FLATPACK IN-LINE IN-LINE
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
传播延迟(tpd) 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns
认证状态 Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified
施密特触发器 NO NO NO NO NO NO NO NO NO NO
筛选级别 MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class V MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO YES YES NO YES YES YES YES NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 TIN LEAD TIN LEAD GOLD GOLD GOLD TIN LEAD TIN LEAD TIN LEAD GOLD TIN LEAD
端子形式 THROUGH-HOLE NO LEAD FLAT THROUGH-HOLE FLAT FLAT NO LEAD FLAT THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL UPPER DUAL DUAL DUAL DUAL UPPER DUAL DUAL DUAL
总剂量 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V 1M Rad(Si) V
端子节距 2.54 mm - 1.27 mm 2.54 mm 1.27 mm 1.27 mm - 1.27 mm 2.54 mm 2.54 mm
Prop。Delay @ Nom-Sup - 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns
Base Number Matches - 1 1 1 1 1 1 1 1 1
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