STP100NF04
STB100NF04, STB100NF04-1
N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D
2
PAK/I
2
PAK
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
STP100NF04
STB100NF04
STB100NF04-1
s
s
s
V
DSS
40 V
40 V
40 V
R
DS(on)
< 0.0046
Ω
< 0.0046
Ω
<0.0046
Ω
I
D
120 A
120 A
120 A
Pw
300 W
300 W
300 W
12
3
TYPICAL R
DS
(on) = 0.0043
Ω
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
TO-220
I
2
PAK
3
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
1
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
ORDERING INFORMATION
SALES TYPE
STP100NF04
STB100NF04T4
STB100NF04-1
MARKING
P100NF04
B100NF04
B100NF04
PACKAGE
TO-220
D
2
PAK
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
February 2002
1/15
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(#)
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
E
AS
(2)
T
j
T
stg
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
Value
40
40
± 20
120
120
480
300
2
6
1.2
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤120A,
di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25°C, I
d
= 60A, V
DD
=30 V
(#) Current Limited by Package
THERMAL DATA
TO-220 / I
2
PAK / D
2
PAK
Rthj-case
Rthj-pcb
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-ambient (Free air) Max
Maximum Lead Temperature For Soldering Purpose
0.5
See Curve on page 6
62.5
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 50 A
2
0.0043
Min.
40
1
10
±100
4
0.0046
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
2/15
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V
,
I
D
= 50 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
150
5100
1300
160
Max.
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 20 V, I
D
= 60 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 32V, I
D
= 120 A,
V
GS
= 10V
(see, Figure 4)
Min.
Typ.
35
220
110
35
35
150
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
V
DD
= 20 V, I
D
= 60 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
80
50
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A, V
GS
= 0
I
SD
= 120 A, di/dt = 100A/µs
V
DD
= 20V, T
j
= 150°C
(see test circuit, Figure 5)
75
185
5
Test Conditions
Min.
Typ.
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/15
STP100NF04, STB100NF04, STB100NF04-1
Power Derating vs Tc
Max Id Current vs Tc
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/15
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown voltage vs Temperature
5/15
DSP 与 ARM 处理器
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