N-CHANNEL 40V - 0.0036
Ω
- 100A D
2
PAK
STripFET™ II POWER MOSFET
TYPE
STB100NF04L
s
s
s
s
STB100NF04L
V
DSS
40 V
R
DS(on)
<0.0042Ω
I
D
100 A
TYPICAL R
DS
(on) = 0.0036
Ω
LOW THRESHOLD DRIVE
100% AVALANCHE TESTED
LOGIC LEVEL DEVICE
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
D
2
PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
40
40
± 16
100
70
400
300
2
3.6
1.4
-65 to 175
175
(1) I
SD
≤100A,
di/dt
≤240A/µs,
V
DD
≤
32V, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
AR
= 50A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
(•)
Pulse width limited by safe operating area.
(*) Current Limited by package
February 2002
.
1/9
STB100NF04L
THERMAL DATA
Rthj-case
Rthj-amb
T
j
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 16 V
Min.
40
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 250 µA
I
D
= 50 A
I
D
= 50 A
Min.
1
0.0036
0.0040
0.0042
0.0065
Typ.
Max.
Unit
V
Ω
Ω
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V
I
D
= 20 A
Min.
Typ.
50
6400
1300
190
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/9
STB100NF04L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 50 A
V
DD
= 20 V
R
G
= 4.7
Ω
V
GS
= 4.5 V
(Resistive Load, Figure 3)
V
DD
= 32V I
D
= 100A V
GS
= 4.5V
Min.
Typ.
37
270
72
20
28.5
90
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Parameter
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 20 V
D
= 50 A
R
G
= 4.7Ω,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
I
D
= 100 A
V
clamp
= 32 V
R
G
= 4.7Ω,
V
GS
= 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
90
80
85
125
160
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
I
SD
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 100A
V
GS
= 0
88
240
5.5
Test Conditions
Min.
Typ.
Max.
100
400
1.3
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 100 A
V
DD
= 20 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
STB100NF04L
Normalized Gate Threshold Voltage vs Temperature
Normalized
on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
.
5/9
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
