STP11NK50Z - STP11NK50ZFP
STB11NK50Z
N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D
2
PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
s
s
s
s
s
s
V
DSS
500 V
500 V
500 V
R
DS(on)
< 0.52
Ω
< 0.52
Ω
< 0.52
Ω
I
D
10 A
10 A
10 A
Pw
125 W
125 W
30 W
3
1
2
s
TYPICAL R
DS
(on) = 0.48
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (D
2
PAK VERSION)
TO-220
3
1
TO-220FP
D
2
PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s
LIGHTING
ORDERING INFORMATION
SALES TYPE
STB11NK50ZT4
STP11NK50Z
STP11NK50ZFP
MARKING
B11NK50Z
P11NK50Z
P11NK50ZFP
PACKAGE
D
2
PAK
TO-220
TO-220FP
PACKAGING
TAPE & REEL
TUBE
TUBE
June 2003
1/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
V
ESD(G-S)
dv/dt (1)
Viso
T
j
T
stg
Parameter
TO-220 / D
2
PAK
Value
TO-220FP
Unit
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
--
10
6.3
40
125
1
500
500
± 30
10(*)
6.3(*)
40(*)
30
0.24
4000
4.5
2500
-55 to 150
-55 to 150
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
( ) Pulse width limited by safe operating area
(1) I
SD
≤10A,
di/dt
≤200A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 / D
2
PAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
1
62.5
300
TO-220FP
4.2
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
10
190
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 1mA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10V, I
D
= 5 A
3
3.75
0.48
Min.
500
1
50
±10
4.5
0.52
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
=15V
,
I
D
= 5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
7.7
1390
173
42
110
Max.
Unit
S
pF
pF
pF
pF
V
GS
= 0V, V
DS
= 0V to 400V
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Test Conditions
V
DD
= 250 V, I
D
= 5.5 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 400V, I
D
= 11.4 A,
V
GS
= 10V
Min.
Typ.
14.5
18
49
10
25
68
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Parameter
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 250 V, I
D
= 5.5 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 400V, I
D
= 11.4 A,
R
G
= 4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
41
15
11.5
12
27
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10 A, V
GS
= 0
I
SD
= 10 A, di/dt = 100A/µs
V
DD
= 36V, T
j
= 150°C
(see test circuit, Figure 5)
308
2.4
16
Test Conditions
Min.
Typ.
Max.
10
40
1.6
Unit
A
A
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
3/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Safe Operating Area For TO-220 / D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220 / D2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
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