N-CHANNEL 55V - 0.005
Ω
-120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
TYPE
STB150NF55
STP150NF55
STP150NF55
s
s
STB150NF55 STP150NF55
STW150NF55
AUTOMOTIVE SPECIFIC
V
DSS
55 V
55 V
55 V
R
DS(on)
<0.006
Ω
<0.006
Ω
<0.006
Ω
I
D
120 A
(**)
120 A
(**)
120 A
(**)
3
1
TYPICAL R
DS
(on) = 0.005
Ω
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
D
2
PAK
TO-263
(Suffix “T4”)
3
1
2
TO-247
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D
2
PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
I
D
(**)
Drain Current (continuous) at T
C
= 100°C
I
D
I
DM
(•)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(•)
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
55
55
± 20
120
106
480
300
2.0
8
850
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(1) I
SD
≤120A,
di/dt
≤200A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
October 2002
1/14
STB150NF55 STP150NF55 STW150NF55
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA
V
GS
= 0
Min.
55
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 60 A
Min.
2
0.005
Typ.
Max.
4
0.006
Unit
V
Ω
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS =
15 V
I
D
= 60 A
Min.
Typ.
160
4400
1050
350
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/14
STB150NF55 STP150NF55 STW150NF55
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 60 A
V
DD
= 27.5 V
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, Figure 3)
V
DD
=27.5 V I
D
=120A V
GS
= 10V
Min.
Typ.
35
180
140
35
70
Max.
Unit
ns
ns
170
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 60 A
V
DD
= 27.5 V
R
G
= 4.7Ω,
V
GS
= 10 V
(Resistive Load, Figure 3)
Min.
Typ.
140
80
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
I
SD
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
V
GS
= 0
130
350
7.5
Test Conditions
Min.
Typ.
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 120 A
V
DD
= 25 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/14
STB150NF55 STP150NF55 STW150NF55
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/14
STB150NF55 STP150NF55 STW150NF55
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
Power Derating vs Tc
.
Max Id Current vs Tc
.
.
5/14
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
