STB16NS25
N-CHANNEL 250V - 0.23Ω - 16A D
2
PAK
MESH OVERLAY™ MOSFET
TYPE
STB16NS25
s
s
s
V
DSS
250 V
R
DS(on)
< 0.28
Ω
I
D
16 A
TYPICAL R
DS
(on) = 0.23
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
T
stg
T
j
February 2003
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
250
250
± 20
16
11
64
140
1
5
–65 to 175
175
(1) I
SD
≤
16A, di/dt≤300 A/µs, V
DD
≤
V
(BR)DSS
, Tj≤T
jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/9
(•)Pulse width limited by safe operating area
STB16NS25
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
0.9
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 28 V)
Max Value
16
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20 V
Min.
250
1
50
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8 A
Min.
2
Typ.
3
0.23
Max.
4
0.28
Unit
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 8 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
14
Typ.
15
1270
190
75
Max.
Unit
S
pF
pF
pF
2/9
STB16NS25
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 125 V, I
D
= 8 A
R
G
= 4.7Ω V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 200V, I
D
= 16 A,
V
GS
= 10V
Min.
Typ.
15
25
60
8
22
80
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Parameter
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 125V, I
D
= 8 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
V
clamp
= 200V, I
D
= 16 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
75
35
25
30
55
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A, V
GS
= 0
I
SD
= 16 A, di/dt = 100A/µs
V
DD
= 33V, T
j
= 150°C
(see test circuit, Figure 5)
270
1.5
11.5
Test Conditions
Min.
Typ.
Max.
16
64
1.5
Unit
A
A
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
STB16NS25
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB16NS25
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/9
测试/测量
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