STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I
2
PAK
PowerMESH™ MOSFET
TYPE
STP19NB20
STP19NB20FP
STB19NB20-1
s
s
s
s
s
V
DSS
200 V
200 V
200 V
R
DS(on)
< 0.18
Ω
< 0.18
Ω
< 0.18
Ω
I
D
19 A
10 A
19 A
3
1
2
TYPICAL R
DS
(on) = 0.15
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I PAK
(Tabless TO-220)
2
12
3
INTERNAL SCHEMATIC DIAGRAM
b
O
so
te
le
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
19
12
76
125
1
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Parameter
Value
STP(B)19NB20(-1)
200
200
± 30
10
6.0
76
35
0.28
5.5
-
–65 to 150
150
(1)I
SD
≤19
A, di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Unit
STP19NB20FP
V
V
V
A
A
A
W
W/°C
V/ns
2500
V
°C
°C
1/12
I
DM
(
l
)
P
TOT
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
dv/dt (1)
V
ISO
T
stg
T
j
August 2002
(•)Pulse width limited by safe operating area
STP19NB20/FP/STB19NB20-1
THERMAL DATA
TO-220/I
2
PAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
1
62.5
300
TO-220FP
3.57
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
19
580
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±30V
Min.
200
Typ.
ON (1)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
, I
D
= 250µA
DYNAMIC
Symbol
g
fs
(1)
C
iss
Forward Transconductance
O
so
b
C
oss
C
rss
te
le
r
P
Parameter
uc
od
s)
t(
V
GS
= 10V, I
D
= 9.5 A
so
b
-O
Test Conditions
Test Conditions
te
le
r
P
3
od
Typ.
4
0.15
s)
t(
uc
Max.
1
10
±100
Unit
V
µA
µA
nA
Min.
Max.
5
0.18
Unit
V
Ω
Min.
3
Typ.
Max.
Unit
S
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1000
285
45
pF
pF
pF
2/12
STP19NB20/FP/STB19NB20-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 100V, I
D
= 9.5 A
R
G
= 4.7Ω V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 160V, I
D
= 19 A,
V
GS
= 10V
Min.
Typ.
15
15
29
9.5
13
40
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 160V, I
D
= 19 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
10
10
20
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 19 A, V
GS
= 0
I
SD
= 19 A, di/dt = 100A/µs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
Test Conditions
Min.
Typ.
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/I
2
PAK
O
so
b
te
le
r
P
uc
od
s)
t(
so
b
-O
te
le
r
P
od
s)
t(
uc
Max.
19
Unit
A
76
1.5
A
V
ns
µC
A
ns
210
1.5
14.5
Safe Operating Area for TO-220FP
3/12
STP19NB20/FP/STB19NB20-1
Thermal Impedance for TO-220/I
2
PAK
Thermal Impedance for TO-220FP
Output Characteristics
Tranfer Characteristics
Tranconductance
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Static Drain-Source On Resistance
4/12
STP19NB20/FP/STB19NB20-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
5/12
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