®
STB22NE03L
N - CHANNEL 30V - 0.034Ω - 22A TO-263
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
STB22NE03L
s
s
s
s
s
V
DSS
30 V
R
DS(on)
<0.05
Ω
I
D
22 A
s
TYPICAL R
DS(on)
= 0.034
Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
dv/dt (
1
) Peak Diode Recovery voltage slope
T
s tg
T
j
Storage Temperature
Max. Operating Junction Temperature
o
D
2
PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
±
15
22
16
88
60
0.4
6
-65 to 175
175
(
1
) I
SD
≤
22 A, di/dt
≤
300 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(•) Pulse width limited by safe operating area
April 1999
1/6
STB22NE03L
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
2.5
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15 V)
Max Value
22
TBD
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µ
A
V
GS
= 0
Min.
30
1
10
±
100
Typ.
Max.
Unit
V
µ
A
µA
nA
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
15 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10 V
V
GS
= 5 V
Test Con ditions
I
D
= 250
µA
I
D
= 11 A
I
D
= 11 A
22
Min.
1
Typ.
1.7
0.034
0.049
Max.
2.5
0.05
0.06
Unit
V
Ω
Ω
A
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
=11 A
V
GS
= 0
Min.
7
Typ.
13
680
160
60
Max.
Unit
S
pF
pF
pF
2/6
STB22NE03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 15 V
I
D
= 11 A
R
G
= 4.7
Ω
V
GS
= 5 V
(Resistive Load, see fig. 3)
V
DD
= 24 V I
D
= 22 A V
GS
= 5 V
Min.
Typ.
15
70
13
6
6
18
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
clamp
= 24 V
I
D
= 22 A
V
GS
= 5 V
R
G
=
4.7 Ω
(Induct ive Load, see fig. 5)
Min.
Typ.
13
33
55
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(
∗
)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 22 A
V
GS
= 0
40
44
2.2
I
SD
= 22 A
di/dt = 100 A/
µ
s
o
T
j
= 150 C
V
DD
= 15 V
(see test circuit, fig. 5)
Test Con ditions
Min.
Typ.
Max.
22
88
1.5
Unit
A
A
V
ns
µ
C
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
3/6
STB22NE03L
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuits For
Resistive Load
Fig. 4:
Gate Charge test Circuit
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STB22NE03L
TO-263 (D
2
PAK) MECHANICAL DATA
mm
MIN.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
4.4
2.49
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
DIM.
D
A
C
A2
DETAIL ”A”
A1
B2
B
G
C2
DETAIL”A”
E
L2
L
L3
P011P6/E
5/6
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