®
STB30NE06L
N - CHANNEL 60V - 0.35Ω - 30A - D
2
PAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
STB30NE06L
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.05
Ω
I
D
30 A
s
TYPICAL R
DS(on)
= 0.035
Ω
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
D
2
PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
60
60
±
20
30
21
120
80
0.53
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
March 1999
1/6
STB30NE06L
THERMAL DATA
R
thj -case
Rt hj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1.875
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
20
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µ
A
V
GS
= 0
Min.
60
1
10
±
100
Typ.
Max.
Unit
V
µ
A
µA
nA
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 5 V
V
GS
= 10 V
Test Con ditions
I
D
= 250
µA
I
D
= 15 A
I
D
= 15 A
30
Min.
1
Typ.
1.75
0.045
0.035
Max.
2.5
0.06
0.05
Unit
V
Ω
Ω
A
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
=15 A
V
GS
= 0
Min.
10
Typ.
18
1350
195
58
Max.
Unit
S
pF
pF
pF
2/6
STB30NE06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
Ω
V
GS
= 4.5 V
(Resistive Load, see fig. 3)
V
DD
= 48 V I
D
= 30 A V
GS
= 5 V
Min.
Typ.
25
105
20
8
10
28
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
d(of f)
t
f
t
r (Voff)
t
f
t
c
Parameter
Turn-off Delay T ime
Fall T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
DD
= 30 V
I
D
= 15 A
V
GS
= 4.5 V
R
G
= 4.7
Ω
(Resistive Load, see fig. 3)
V
DD
= 48 V
I
D
= 30 A
V
GS
= 4.5 V
R
G
= 4.7
Ω
(Induct ive Load, see fig. 5)
Min.
Typ.
50
20
15
40
60
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(
•
)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 30 A
V
GS
= 0
80
0.18
4.5
I
SD
= 30 A
di/dt = 100 A/
µ
s
T
j
= 150
o
C
V
DD
= 30 V
(see test circuit, fig. 5)
Test Con ditions
Min.
Typ.
Max.
30
120
1.5
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
3/6
STB30NE06L
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuits For
Resistive Load
Fig. 4:
Gate Charge test Circuit
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STB30NE06L
TO-263 (D
2
PAK) MECHANICAL DATA
mm
MIN.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
4.4
2.49
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
DIM.
D
A
C
A2
DETAIL ”A”
A1
B2
B
G
C2
DETAIL”A”
E
L2
L
L3
P011P6/E
5/6
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