STB3NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STB3NA80
n
n
n
n
n
n
n
n
V
DSS
800 V
R
DS(on )
< 4.5
Ω
I
D
3.1 A
n
TYPICAL R
DS(on)
= 3.5
Ω
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
3
12
1
3
I2PAK
TO-262
D2PAK
TO-263
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Fact or
Storage Temperature
Max. O perating Junction Temperature
o
o
Valu e
800
800
±
30
3.1
2
12.5
100
1.25
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
October 1995
1/10
STB3NA80
THERMAL DATA
R
thj -ca se
R
thj- amb
R
thc-sin k
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
0.8
62.5
0.5
300
o
o
C/W
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
E
AR
I
AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
o
(T
c
= 100 C, pulse width limited by T
j
max,
δ
< 1%)
Max Valu e
3.1
48
2
2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
T est Con ditio ns
I
D
= 250
µA
V
GS
= 0
Min .
800
250
1000
±
100
T yp.
Max.
Unit
V
µA
µA
nA
V
DS
= Max Rating
Zero G ate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS( th)
R
DS( on)
I
D(on )
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
V
GS
= 10V
T est Con ditio ns
I
D
= 250
µA
I
D
= 1.5 A
I
D
= 1.5 A
T
c
= 100 C
3.1
o
Min .
2.25
T yp.
3
3.5
Max.
3.75
4.5
9
Unit
V
Ω
Ω
A
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
is s
C
o ss
C
r ss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
T est Con ditio ns
V
DS
> I
D(on)
x R
DS(on)max
V
DS
= 25 V
f = 1 MHz
I
D
= 1.5 A
V
GS
= 0
Min .
1.5
T yp.
3
730
85
20
950
115
30
Max.
Unit
S
pF
pF
pF
2/10
STB3NA80
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
T est Con ditio ns
V
DD
= 400 V I
D
= 1.5 A
V
GS
= 10 V
R
G
= 47
Ω
(see test circuit, figure 3)
V
DD
= 640 V I
D
= 3 A
V
GS
= 10 V
R
G
= 47
Ω
(see test circuit, figure 5)
V
DD
= 640 V
I
D
= 3 A
V
GS
= 10 V
Min .
T yp.
25
55
180
Max.
35
75
Unit
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
6
15
50
nC
nC
nC
SWITCHING OFF
Symbo l
t
r( Voff )
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
T est Con ditio ns
V
DD
= 640 V I
D
= 3 A
R
G
= 47
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min .
T yp.
50
15
75
Max.
70
25
100
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.1 A
V
GS
= 0
700
9.5
27
I
SD
= 3.1 A di/dt = 100 A/µs
o
T
j
= 150 C
V
DD
= 100 V
(see test circuit, figure 5)
T est Con ditio ns
Min .
T yp.
Max.
3.1
12.5
1.6
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limi ted by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STB3NA80
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STB3NA80
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
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