®
STB3NC60
N - CHANNEL 600V - 3.3Ω - 3A - D
2
PAK/I
2
PAK
PowerMESH™
ΙΙ
MOSFET
T YPE
STB3NC60
½
½
½
½
½
V
DSS
600 V
R
DS(on)
< 3.6
Ω
I
D
3 A
TYPICAL R
DS(on)
= 3.3
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
12
1
DESCRIPTION
The PowerMESH™
II
is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
½
HIGH CURRENT, HIGH SPEED SWITCHING
½
SWITCH MODE POWER SUPPLIES (SMPS)
½
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
2
PAK
TO-262
(Suffix ”-1”)
D
2
PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. O perating Junction Temperature
o
o
Value
600
600
±
30
3
1.9
12
80
0.64
4
-65 to 150
150
(
1
) I
SD
≤3A,
di/dt
≤
100 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
(•) Pulse width limited by safe operating area
February 2000
1/9
STB3NC60
THERMAL DATA
R
thj- ca se
R
t hj-a mb
R
thc -sin k
T
l
Thermal Resistance Junction-case
Max
1.56
62.5
0.5
300
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
o
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
Max Valu e
3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
( BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond itions
I
D
= 250
µA
V
GS
= 0
Min.
600
1
50
±
100
Typ .
Max.
Un it
V
µA
µA
nA
V
DS
= Max Rating
Zero G ate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th )
R
DS(on )
I
D(on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
Test Cond itions
I
D
= 250
µA
I
D
= 1.5 A
3
Min.
2
Typ .
3
3.3
Max.
4
3.6
Un it
V
Ω
A
V
DS
> I
D(on )
x R
DS(on )max
V
GS
= 10 V
DYNAMIC
Symbo l
g
fs
(∗)
C
is s
C
os s
C
rs s
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Cond itions
V
DS
> I
D(on )
x R
DS(on )max
V
DS
= 25 V
f = 1 MHz
I
D
= 1.5 A
V
GS
= 0
Min.
Typ .
2
400
57
7
Max.
Un it
S
pF
pF
pF
2/9
STB3NC60
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d( on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on T ime
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Cond itions
V
DD
= 300 V I
D
= 1.5 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 3)
V
DD
= 480 V
I
D
= 3 A V
GS
= 10 V
Min.
Typ .
9
13
13
2.3
4.4
18.2
Max.
Un it
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r(Vof f )
t
f
t
c
Parameter
Off-voltage Rise Time
Fall T ime
Cross-over Time
Test Cond itions
V
DD
= 480 V I
D
= 3 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
Typ .
13
15
21
Max.
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3 A
V
GS
= 0
420
1.5
7.1
Test Cond itions
Min.
Typ .
Max.
3
12
1.6
Un it
A
A
V
ns
µC
A
I
SD
= 3 A di/dt = 100 A/µs
T
j
= 150
o
C
V
DD
= 100 V
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for D
2
PAK/I
2
PAK
Thermal Impedancefor D
2
PAK/I
2
PAK
3/9
STB3NC60
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB3NC60
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
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