STP45NF06L
STB45NF06L
N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D
2
PAK
STripFET™ II POWER MOSFET
TYPE
STP45NF06L
STB45NF06L
s
s
s
V
DSS
60 V
60 V
R
DS(on)
< 0.028Ω
< 0.028Ω
I
D
38 A
38 A
TYPICAL R
DS
(on) = 0.022Ω
EXCEPTIONAL dv/dt CAPABILITY
LOGIC LEVEL GATE DRIVE
3
1
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
D
2
PAK
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
±16
38
26
152
80
0.53
7
–55 to 175
(1) I
SD
≤38A,
di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
(
q
) Pulse width limited by safe operating area
September 2002
1/10
STP45NF06L - STB45NF06L
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
1.87
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
38
135
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±16V
Min.
60
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5 V, I
D
= 19 A
V
GS
= 10V, I
D
= 19 A
Min.
1
Typ.
1.7
0.024
0.022
Max.
2.5
0.03
0.028
Unit
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
=15V
,
I
D
=19 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
24
1600
217
62
Max.
Unit
S
pF
pF
pF
2/10
STP45NF06L - STB45NF06L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 30V, I
D
= 19A
R
G
= 4.7Ω V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 48V, I
D
= 38A,
V
GS
= 5V
Min.
Typ.
30
105
23
7
10
31
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
d(off)
t
f
t
c
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
V
DD
= 30V, I
D
= 19A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
D
=38A
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
65
25
Max.
Unit
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
50
55
85
ns
ns
ns
Max.
38
152
Unit
A
A
V
ns
nC
A
SOURCE DRAIN DIODE
Test Conditions
Min.
Typ.
I
SD
= 38A, V
GS
= 0
I
SD
= 38A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
70
110
4
1.5
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/10
STP45NF06L - STB45NF06L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STP45NF06L - STB45NF06L
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
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