N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
| 参数名称 | 属性值 |
| 厂商名称 | ST(意法半导体) |
| 零件包装代码 | TO-262 |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| 雪崩能效等级（Eas） | 354 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 700 V |
| 最大漏极电流 (Abs) (ID) | 6.8 A |
| 最大漏极电流 (ID) | 6.8 A |
| 最大漏源导通电阻 | 1.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262 |
| JESD-30 代码 | R-PSIP-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 135 W |
| 最大脉冲漏极电流 (IDM) | 27 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| STB8NC70Z-1 | STP8NC70ZFP | STP8NC70Z | STB8NC70Z | |
|---|---|---|---|---|
| 描述 | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| 包装说明 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compli | _compli | _compli | _compli |
| 雪崩能效等级（Eas） | 354 mJ | 354 mJ | 354 mJ | 354 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 700 V | 700 V | 700 V | 700 V |
| 最大漏极电流 (Abs) (ID) | 6.8 A | 6.8 A | 6.8 A | 6.8 A |
| 最大漏极电流 (ID) | 6.8 A | 6.8 A | 6.8 A | 6.8 A |
| 最大漏源导通电阻 | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSIP-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 135 W | 40 W | 135 W | 135 W |
| 最大脉冲漏极电流 (IDM) | 27 A | 27 A | 27 A | 27 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 零件包装代码 | TO-262 | TO-220AB | SFM | - |
| JEDEC-95代码 | TO-262 | TO-220AB | TO-220 | - |
| 是否Rohs认证 | - | 不符合 | 不符合 | 符合 |
| JESD-609代码 | - | e0 | e0 | e3 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | - | 1 | 1 | 1 |
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