NPN Silicon Digital Transistor
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 零件包装代码 | SOT-363 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 |
| 针数 | 6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 70 |
| JESD-30 代码 | R-PDSO-G6 |
| 湿度敏感等级 | 1 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 170 MHz |
| Base Number Matches | 1 |
| BCR108S | BCR108TE6327 | BCR108 | BCR108F | BCR108L3 | BCR108T | BCR108W | |
|---|---|---|---|---|---|---|---|
| 描述 | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor | NPN Silicon Digital Transistor |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 零件包装代码 | SOT-363 | - | SOT-23 | - | - | SC-75 | SC-70 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-F3 | TSLP-3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 6 | - | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | - | compliant | unknown | compliant | unknown | compliant |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | - | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | BUILT-IN BIAS RESISTOR RATIO IS 21.36 |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 70 | - | 70 | 70 | 70 | 70 | 70 |
| JESD-30 代码 | R-PDSO-G6 | - | R-PDSO-G3 | R-PDSO-F3 | R-XBCC-N3 | R-PDSO-G3 | R-PDSO-G3 |
| 湿度敏感等级 | 1 | - | 1 | 1 | - | 1 | 1 |
| 元件数量 | 2 | - | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 6 | - | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | - | GULL WING | FLAT | NO LEAD | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL | BOTTOM | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 170 MHz | - | 170 MHz | 170 MHz | 170 MHz | 170 MHz | 170 MHz |
| Base Number Matches | 1 | - | 1 | 1 | 1 | 1 | 1 |
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