MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9130L/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
Designed for GSM and GSM EDGE base station applications with
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 28 volt base station equipment.
•
Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
N–Channel Enhancement–Mode Lateral MOSFETs
MRF9130L
MRF9130LR3
MRF9130LSR3
GSM/GSM EDGE
921–960 MHz, 130 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9130L
CASE 465A–06, STYLE 1
NI–780S
MRF9130LSR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
=
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Value
65
–0.5, +15
298
1.7
–65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF9130L MRF9130LR3 MRF9130LSR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vds, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vds, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 1000 mA, f = 921 and 960 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 130 W, I
DQ
= 1000 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 130 W CW, I
DQ
= 1000 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally input matched.
P1dB
G
ps
η
IRL
Ψ
120
15.5
43
—
135
16.5
48
–12
—
—
—
–9
W
dB
%
dB
C
oss
C
rss
—
—
110
4.4
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
3
3.6
0.2
12
4
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation In Output Power
Before and After Test
MRF9130L MRF9130LR3 MRF9130LSR3
2
MOTOROLA RF DEVICE DATA
V
GG
R1
+
C1
C2
R2
C3
R3
C6
C5
+
C4
V
DD
RF
INPUT
Z1
C7
C8
Z2
C9
Z3
C10
DUT
C12
Z4
C14
C16
C19
Z5
C20
C21
Z6
C22
RF
OUTPUT
C11
C13
C15
C17
C18
Figure 1. 921–960 MHz Test Circuit Schematic
Table 1. 921–960 MHz Test Circuit Component Designations and Values
Designators
C1, C4
C2, C5
C3, C8, C21, C22
C6
C7
C9
C10
C11
C12, C13
C14, C15
C16, C17, C18
C19
C20
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
PCB
Description
10
µF,
35 V Tantalum Capacitors, Vishay–Sprague #293D106X9035D
100 nF Chip Capacitors (1206), AVX #1206C104KATDA
22 pF, 100B Chip Capacitors, ATC #100B220C
33 pF, 100B Chip Capacitor, ATC #100B330JW
1.0 pF, 100B Chip Capacitor, ATC #100B1R0BW
4.7 pF, 100B Chip Capacitor, ATC #100B4R7BW
8.2 pF, 100B Chip Capacitor, ATC #100B8R2CW
10 pF, 100B Chip Capacitor, ATC #100B100GW
12 pF, 100B Chip Capacitors, ATC #100B120GW
2.7 pF, 100B Chip Capacitors, ATC #100B2R7BW
3.9 pF, 100B Chip Capacitors, ATC #100B3R9BW
3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW
1.8 pF, 100B Chip Capacitor, ATC #100B1R8BW
18 kW, 1/8 W Chip Resistor (1206)
10 kW, 1/8 W Chip Resistor (1206)
1.0 kW, 1/8 W Chip Resistor (1206)
0.117″ x 0.600″ Microstrip
0.117″ x 1.851″ Microstrip
1.074″ x 1.068″ Microstrip
1.074″ x 0.980″ Microstrip
0.117″ x 1.933″ Microstrip
0.117″ x 0.605″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
MOTOROLA RF DEVICE DATA
MRF9130L MRF9130LR3 MRF9130LSR3
3
V
BIAS
C1
R1
C2 R2
C7
C8
C3
C9
R3
C10
C12 C14
C16
C4
C5
C6
C19 C20
C21
V
SUPPLY
C11
C13 C15
C17
C18
C22
Ground
MRF9130L
Ground
Figure 2. 921–960 MHz Test Circuit Component Layout
MRF9130L MRF9130LR3 MRF9130LSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
18
17
Gps, POWER GAIN (dB)
16
15
14
13
900
920
940
960
f, FREQUENCY (MHz)
130 W
60 W
IRL
V
DD
= 28 Vdc
I
DQ
= 1000 mA
980
-20
-25
1000
G
ps
130 W
-10
-15
P
out
= 60 W
0
-5
IRL, INPUT RETURN LOSS (dB)
Figure 3. Power Gain and Input Return Loss versus
Frequency
18
17.5
Gps, POWER GAIN (dB)
17
G
ps
60
50
h
, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
40
30
20
η
1
10
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 940 MHz
100
1000
10
0
18
I
DQ
= 1200 mA
17
1000 mA
800 mA
16
600 mA
16.5
16
15
V
DD
= 28 Vdc
f = 940 MHz
14
1
10
100
1000
15.5
15
P
out
, OUTPUT POWER (dBm)
P
out
, OUTPUT POWER (WATTS)
Figure 4. Power Gain and Efficiency versus
Output Power
Figure 5. Power Gain versus Output Power
18
17
G ps , POWER GAIN (dB)
16
15
14
13
30 V
28 V
I
DQ
= 1000 mA
f = 940 MHz
1
10
26 V
V
DD
= 24 V
100
1000
18
T
C
= -20°C
17
25°C
50°C
16
85°C
G ps , POWER GAIN (dB)
15
14
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 940 MHz
1
10
100
1000
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF9130L MRF9130LR3 MRF9130LSR3
5
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