HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.02.25
Page No. : 1/4
H6968CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 7.0A)
(Battery Switch, ESD Protected)
8
7
6
5
8-Lead Plastic
TSSOP-8
Package Code: TS
H6968CTS Symbol & Pin Assignment
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Features
•
R
DS(on)
<20mΩ@V
GS
=4.5V, I
D
=7.0A
•
R
DS(on)
<24mΩ@V
GS
=2.5V, I
D
=5.5A
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Specially Designed for Li ion Battery Packs Use
•
Designed for Battery Switch Appliactions
•
ESD Protected
Q2
Q1
1
2
3
4
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θ
JA
ESD
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
ESD Protect on Gate and Source
Parameter
Ratings
20
±12
7.0
30
1.5
0.96
-55 to +150
83
2000
Units
V
V
A
A
W
W
°C
°C/W
V
*1: Maximum DC current limited by the package under the ambient condition at room temperature.
*2: 1-in
2
2oz Cu PCB board
H6968CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
•
Dynamic
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, I
D
=1A, V
GS
=4.5V
R
GEN
=6Ω
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, I
D
=7A, V
GS
=4.5V
-
-
-
-
-
-
-
-
-
-
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=7.0A
V
GS
=2.5V, I
D
=5.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=16V, V
GS
=0V
V
GS
=±4.5V, V
DS
=0V
V
DS
=10V, I
D
=7.0A
20
12-
14
0.6
-
-
-
Characteristic
Test Conditions
Min.
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.02.25
Page No. : 2/4
Typ.
Max.
Unit
-
16.5
20
-
-
-
30
-
20
V
mΩ
24
1.6
1
±200
-
V
uA
nA
S
9
2.4
3.6
476
65.1
49
50
100
500
200
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.5A
-
-
-
0.61
1.7
1.2
A
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Switching
Test Circuit
V
DD
t
d(on)
t
on
t
r
Switching
Waveforms
t
d(off)
t
off
t
f
90%
90%
R
D
V
IN
V
GEN
R
G
G
S
Input, V
IN
10%
Pulse Width
50%
50%
90%
D
V
OUT
Output, V
OUT
10%
10%
Inverted
H6968CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TSSOP-8 Dimension
D
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.02.25
Page No. : 3/4
H6968CTS
Marking:
Pb Free Mark
8
7
6
5
Control Code
Data Code
Pin 1 Index
E
E1
Pin1
index
2
3
4
Pin Style: 1.D 2.S1 3.S1 4.G1 5.G2 6.S2 7.S2 8.D
Note: Green label is used for pb-free packing
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
H6 9 6 8 C
Pb-Free: "
.
"
(Note)
Normal: None
DIM
A
A1
b
C
D
E
E1
e
L
S
Min.
Max.
-
1.20
0.05
0.15
0.19
0.3
0.09
0.20
2.90
3.10
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
o
o
0
8
*: Typical, Unit: mm
Detail F
A1
b
R 0.15
C
Seating
Plane
A
e
S
L
0.25
Detail F
8-Lead TSSOP-8 Plastic
Surface Mounted Package
HSMC Package Code: TS
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H6968CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.02.25
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
Pb-Free Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
<3 C/sec
o
<3 C/sec
o
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H6968CTS
HSMC Product Specification
微控制器 MCU
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