SHANGHAI
MICROELECTRONICS CO., LTD.
July 2007
ME4946
Dual N-Channel Enhancement-Mode MOSFET
Revision:A
General Description
The MOSFETs from SINO-IC provide
the best combination of fast switching, low
on-resistance and cost-effectiveness.
Features
●
●
●
●
V
DS
(V) = 60V
I
D
= 6.5A (V
GS
= 10V)
R
DS(ON)
=41mΩ (V
GS
= 10V)
R
DS(ON)
=52mΩ (V
GS
= 4.5V)
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
60
±20
Units
V
V
A
mW
°C
Drain Current (Note 1)
Total Power Dissipation
Continuous
Pulsed
6.5
30
2
-55 to 150
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Maximum
Junction-to-Ambient
A
Maximum
Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
t
≤
10s
Symbol
Typ
50
Max
62.2
110
40
Units
°C/W
°C/W
°C/W
R
θ
JA
73
R
θ
JL
31
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
ME4946
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
TON
(T
J
=25°C unless otherwise noted)
Test Conditions
I
D
=250μA, V
GS
=0 V
V
DS
=48 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±20 V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=5.3 A
V
GS
=4.5V, I
D
=4.7A
V
Ds
=5V, I
D
=6.3A
1
2.1
33
41
24
1920
155
116
7.6
5
28.9
5.5
47.6
V
DS
=15V,I
D
=6.3A,V
GS
=10V
I
F
=6.3A, dI/dt=100A/μs
I
F
=6.3A, dI/dt=100A/μs
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Min
60
Typ
Max
Units
V
OFF/ON CHARACTERISTICS (Note 2)
1
±100
3
41
52
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
μA
μA
V
-
-
-
-
-
2300
-
-
-
-
-
-
58
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=30V, f=1MHz
-
-
-
TOFF
Tr
Tf
Turn-Off Time
Turn-on Rise Time
Turn-on Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
VDS =30V, RL= 4.7ΩVGS =
10 V,RGEN = 3Ω
-
-
-
Q
g
(10)
Q
gs
Q
gd
t
rr
Q
rr
6
14.4
33.2
43
40
nS
Nc
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
ME4946
Typical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
ME4946
`
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
ME4946
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
微控制器 MCU
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