HI-8200, HI-8201, HI-8202
November 2017
Quad 10 Ohm +/-12V outside-the-rails
Analog Switch with
Open Circuit when Power Off
FEATURES
·
CMOS analog switches with up to +/-12V switching range
from a single 3.3V or 5V supply
·
Low RON: 10
W
max at 25°C
·
Robust CMOS Silicon-on-Insulator (SOI) technology
·
Switch nodes are open-circuit when chip is powered down
·
SOI switch isolation with 1nA typical Off leakage
·
ESD protection > 4KV HBM
·
Fast switching time with break-before-make
·
Low power
·
Extended Temperature Range (-55°C to +125°C)
GENERAL DESCRIPTION
The HI-8200 is a quad analog CMOS switch fabricated with Sili-
con-on-Insulator (SOI) technology for latch-up free operation
and maximum switch isolation. High voltage gate drive is en-
tirely created on-chip enabling +/-12V switching range from a
single 3.3V or 5V supply. These switches are ideally suited for
applications demanding low switch leakage when the power
pins are 0V.
At 25
°
C and with VDD from 3.0V to 5.5V, the switch resistance
(RON) is typically 8
W.
RON is independent of VDD. In a switch-
ing range of -5V to +5V, the maximum deviation of RON from
flat is less than 5%.
These switches conduct equally well in either direction. Power
down and Off state leakages are less than 10nA maximum.
Charge injection is less than 10pC. Switching times are typi-
cally 180ns to the On state and 60ns to the Off state. The on-
board charge pump allows an On/Off cycle time of 5KHz for all
four switches simultaneously before the switching range be-
comes restricted.
The HI-8200 provides four each normally open switches when
the switch control inputs are low. The HI-8201 provides four
each normally closed switches when the switch control inputs
are low. The HI-8202 provides a combination of two normally
closed and two normally open switches.
Industry-standard plastic package options include 20-pin
TSSOP, 16-pin DIP and 16-pin QFN. Ceramic packaging is
available on request. All three products are offered in both in-
dustrial
(-40°C to +85°C) and extended (-55°C to +125°C) tem-
perature range options.
PIN CONFIGURATIONS
(Top Views)
IN1 1
S1A 2
-3
S1B 4
V- 5
GND 6
S4B 7
-8
S4A 9
IN4 10
20 IN2
19 S2A
18 -
17 S2B
16 V+
15 VLOGIC
14 S3B
13 -
12 S3A
11 IN3
HI-8200PSx
20-Pin TSSOP package
16 S1A
13 S2A
12 S2B
11 V+
10 VLOGIC
9
S3B
15 IN1
IN4 6
S1B 1
V- 2
GND 3
APPLICATIONS
·
Avionics
·
Data bus isolation
·
Sample-and-Hold circuits
·
Test Equipment
·
Communications Systems
S4B 4
S4A 5
IN3 7
14 IN2
HI-8200PCx
16-pin 5mm x 5mm Chip-scale package
(see page 6 for additional package configurations)
PRODUCT OPTIONS
PART TYPE IN1
HI-8200
0
1
HI-8201
0
1
HI-8202
0
1
Switch 1
Open
Closed
Closed
Open
Open
Closed
IN2
0
1
0
1
0
1
Switch 2
Open
Closed
Closed
Open
Closed
Open
IN3
0
1
0
1
0
1
Switch 3
Open
Closed
Closed
Open
Closed
Open
IN4
0
1
0
1
0
1
Switch 4
Open
Closed
Closed
Open
Open
Closed
(DS8200 Rev. D)
HOLT INTEGRATED CIRCUITS
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11/17
HI-8200, HI-8201, HI-8202
PIN DESCRIPTIONS
SIGNAL
IN1
S1A
S1B
V-
GND
S4B
S4A
IN4
IN3
S3A
S3B
VLOGIC
V+
S2B
S2A
IN2
FUNCTION
Logic Input
Switch Node
Switch Node
CAP -
Supply
Switch Node
Switch Node
Logic Input
Logic Input
Switch Node
Switch Node
Supply
CAP +
Switch Node
Switch Node
Logic input
DESCRIPTION
HI-8200 and HI-8202 are normally Open when input Low
Switch 1 Node
Switch 1 Node
Bulk storage capacitor. Add 0.1uF ceramic capacitor to GND. (20V or higher).
Reference Ground
Switch 4 Node
Switch 4 Node
HI-8200 and HI-8202 are normally Open when input Low
HI-8201 and HI-8202 are normally Closed when input Low
Switch 3 Node
Switch 3 Node
3.3V or 5.0V Logic supply
Bulk storage capacitor. Add 0.1uF ceramic capacitor to GND. (20V or higher).
Switch 2 Node
Switch 2 Node
HI-8201 and HI-8202 are normally Closed when input Low
NOTE:
V+ and V- pins are
only
to be used for connection of bulk storage capacitors and
MUST NOT
be
loaded.
35W
30W
25W
20W
15W
10W
5W
T = +125C
T = +25C
T = -55C
-18V
-12V
-6V
0V
V
SWITCH
6V
12V
18V
Typical R
ON
as a function of V
SWITCH
and
Temperature (10mA switch current, V
SUPPLY
= +3.3V)
HOLT INTEGRATED CIRCUITS
2
HI-8200, HI-8201, HI-8202
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND = 0V)
Supply Voltage, V
LOGIC
.........................................................................7.0V Continuous Power Dissipation (TA=70°C):
SO Package (derate 6.7mW/°C above 70°C)...................696mW
Switch Current (either direction, DC): .................................................20mA
Plastic DIP (derate 10.53 mw/°C above 70°C) .................842mW
Peak Switch Current (1 ms pulse, 10% duty cycle max.)..................100mA
Thin QFN (derate 21.3mW/°C above 70°C) ...................1702mW
Digital Input Voltage (IN1-4):.....................................-0.3V to V
LOGIC
+ 0.3V
Operating Temperature Range: (Industrial)..........................-40°C to +85°C Storage Temperature Range:
(Hi-Temp) ........................-55°C to +125°C Soldering Temperature:
Maximum Junction Temperature ........................................................175°C
......................................-65°C to +150°C
(Ceramic)......................60 sec. at +300°C
(Plastic - leads).............10 sec. at +280°C
(Plastic - body) .....................+260°C Max.
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only.
Functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
V
LOGIC
= 3.3V or 5.0V
, GND = 0V. Operating temperature range (unless otherwise noted).
PARAMETER
SWITCH PARAMETERS
Switch Resistance, 25°C, 10mA
Leakage - (open circuit and
power down)
Leakage - (open circuit and
power on)
LOGIC INPUTS
Input High Voltage
Input Low Voltage
Input Current
V
IH
V
IL
I
IH
I
IL
SUPPLY
80K Ohm pulldown
VLogic = 3.3V
Vlogic = 5.0V
45
65
0.5
75%
25%
V
V
µA
µA
µA
R
ON
|I
SWLEAK
|
|I
SWLEAKp
|
12V > Vs > -12V
12V > Vs > -12V
12V > Vs > -12V
1
2
2
6
8
1
1
10
10
100
W
nA
nA
SYMBOL
CONDITIONS
FIGURE
MIN
TYP
MAX
UNIT
VL
ogic Operating Range
VL
ogic Operating Current
VDD
IDD
inputs static
VLogic = 3.3V
Vlogic = 5.0V
3.0
5.5
1.0
2.5
V
mA
mA
DYNAMIC PARAMETERS
Max Vin On/Off cycling
Turn On Time
Turn Off time
Break-Before-Make Time
Charge Injection
Off Isolation
Crosstalk
Capacitance
Charge Pump Power On
fcycle
T
ON
T
OFF
T
D
Q
R
R
C
R
C
OFF
C
ON
Tvon
V
S
=0V, R
S
=0
W,
25°C
f = 1 MHz, 25°C
f = 1 MHz, 25°C
Switch Off, 25°C
Switch On, 25°C
V+ and V- = +/-14.5V
VLogic = 5.0V
any load
3
3
4
5
6
7
8
9
10
10
40
180
80
80
-20
65
90
15
60
5
250
150
Khz
ns
ns
ns
pC
dB
dB
pF
pF
ms
HOLT INTEGRATED CIRCUITS
3
HI-8200, HI-8201, HI-8202
TEST CIRCUITS
I
DS
V
1
SA
SB
I
S
(OFF)
SA
A
+
-
I
D
(OFF)
SB
A
+
-
V
S
+
-
R
ON
= V
1
/I
DS
V
S
V
D
Figure 1 - On Resistance
Figure 2 - Off Leakage
0.1µF
+3.3V
0.1µF (20V)
V
IN
(HI-8201)
V
LOGIC
V
+
SB
V
OUT
50%
50%
V
IN
(HI-8200)
50%
50%
SA
IN
+
-
GND
V-
V
S
35pF
300W
V
OUT
90%
50%
0.1µF (20V)
t
ON
t
OFF
Figure 3. Switching Times
0.1µF
+3.3V
0.1µF (20V)
3.3V
V
LOGIC
V
S1
V
S2
S1A
S2A
IN
GND
V-
35pF
V
+
S1B
S2B
35pF
300W
V
OUT2
0.1µF (20V)
V
IN
0V
V
OUT1
V
OUT2
300W
V
OUT1
50%
50%
90%
50%
90%
50%
t
D
t
D
Figure 4. Break-Before-Make Time Delay (HI-8202)
HOLT INTEGRATED CIRCUITS
4
HI-8200, HI-8201, HI-8202
+3.3V
0.1µF (20V)
V
LOGIC
R
S
SA
IN
+
-
GND
V
+
SB
V
OUT
V
IN
V-
C
L
10nF
V
OUT
0.1µF (20V)
V
S
DV
OUT
Q
INJ =
C
L x
DV
OUT
Figure 5. Charge Injection
0.1µF
0.1µF
+3.3V
0.1µF (20V)
+3.3V
0.1µF (20V)
V
LOGIC
V
LOGIC
SA
IN
GND
V
S
V
OUT
0.1µF (20V)
V
+
SB1
50W
IN2
V
+
SB
V
OUT
V
S
V-
50W
IN1
SA1
SB2
GND
SA2
V-
NC
50W
0.1µF (20V)
Figure 6 - Off Isolation
Figure 7 - Channel-to-Channel Crosstalk
0.1µF
+3.3V
0.1µF (20V)
0.1µF
+3.3V
0.1µF (20V)
V
LOGIC
SA
Capacitance
Meter
f=1MHz
IN
GND
V
+
SB
Capacitance
Meter
f=1MHz
V-
0.1µF (20V)
IN
V
LOGIC
SA
V
+
SB
V
S
GND
V-
0.1µF (20V)
Figure 8 - Off Capacitance
Figure 9 - On Capacitance
HOLT INTEGRATED CIRCUITS
5
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