PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
PTFA212001F
Package H-37260-2
Features
2-Carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
30
•
•
•
Thermally-enhanced packages, Pb-free and
RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
IM3 (dBc), ACPR (dBc)
-28
-33
-38
Efficiency
25
20
15
IM3
-43
-48
-53
34
36
38
40
42
44
46
48
10
Drain Efficiency (%)
•
ACPR
5
0
Average Output Power (dBm)
•
•
•
•
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 50 W average
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.3
26.5
—
Typ
15.8
28
–35.5
Max
—
—
–34
Unit
dB
%
dBc
η
D
IMD
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
15.8
38.5
–28
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.6 A
V
GS
= 10 V, V
DS
= 0 V
Data Sheet
2 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA212001E
PTFA212001F
V4
V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA212001E
PTFA212001F
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
V
DD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
35
Broadband Performance
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50.0 dBm
-5
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
2.0 A
-40
-45
-50
1.4 A
30
25
-15
Efficiency
20
15
10
2050
-20
-25
1.8 A
1.6 A
Gain
2090
2130
2170
2210
-30
-35
2250
-55
35
37
39
41
43
45
47
Average Output Power (dBm)
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05.1, 2009-02-24
Input Return Loss (dB)
-35
Return Loss
-10
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
60
50
40
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2170 MHz
18
17
T
CASE
= 25°C
T
CASE
= 90°C
-35
ACPR Up
ACPR Low
Efficiency
40
Drain Efficiency (%)
-40
30
Gain (dB)
16
15
14
13
0
40
80
120
160
200
Gain
Efficiency
-45
20
30
20
10
240
-50
ACPR
10
-55
33
35
37
39
41
43
45
47
49
0
Output Power (W)
Average Output Power (dBm)
Voltage Sweep
I
DQ
= 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz, P
OUT
(PEP) = 53 dBm
-10
-15
50
-20
2-Tone Drive-up at Optimum I
DQ
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
50
45
35
30
25
20
15
10
5
0
45
47
49
51
53
55
Intermodulation Distortion (dBc)
Gain (dB), Drain Efficiency (%)
45
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
39
41
3rd Order IMD (dBc)
-20
-25
-30
-35
-40
-45
23
25
27
29
IM3 Up
35
30
25
IM3
IM5
Gain
20
15
10
IM7
43
31
33
Supply Voltage (V)
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 05.1, 2009-02-24
Drain Efficiency (%)
Efficiency
40
Efficiency
40
Drain Efficiency (%)
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
100
10
Power Gain vs. Power Sweep (CW)
over Temperature
V
DD
= 30 V, I
DQ
= 1500 mA, ƒ = 2170 MHz
17
–15°C
16
V
DD
= 30 V, I
DQ
= 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
Power Gain (dB)
Probability (%)
1
0.1
0.01
48 dBm
46 dBm
52 dBm
50.5 dBm
50 dBm
Input
25°C
15
14
13
12
85°C
0.001
1
2
3
4
5
6
7
8
1
10
100
1000
Peak-to-Average (dB)
Output Power (W)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 1600 m A, ƒ = 2140 MHz,
P
OUT
= 53 dBm PEP
-15
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Intermodulation Distortion (dBc)
Normalized Bias Voltage (V)
20
30
40
-20
-25
-30
-35
-40
-45
-50
-55
0
10
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
3rd order
5th
7th
100
Tone Spacing (MHz)
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 05.1, 2009-02-24
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