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Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> T399N26TOF

T399N26TOF: 产品描述Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element,; 产品类别模拟混合信号IC 触发装置; 文件大小35KB，共3页; 制造商EUPEC [eupec GmbH]

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T399N26TOF概述

Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element,

T399N26TOF规格参数

参数名称	属性值
厂商名称	EUPEC [eupec GmbH]
Reach Compliance Code	unknow
ECCN代码	EAR99
标称电路换相断开时间	150 µs
配置	SINGLE
关态电压最小值的临界上升速率	1000 V/us
最大直流栅极触发电流	250 mA
最大直流栅极触发电压	2 V
JESD-30 代码	O-CEDB-X4
通态非重复峰值电流	7900 A
元件数量	1
端子数量	4
最大通态电流	399000 A
最高工作温度	125 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
认证状态	Not Qualified
最大均方根通态电流	1000 A
断态重复峰值电压	2600 V
重复峰值反向电压	2600 V
表面贴装	YES
端子形式	UNSPECIFIED
端子位置	END
触发设备类型	SCR

T399N26TOF相似产品对比

	T399N26TOF	T399N20TOC	T399N20TOF	T399N22TOC	T399N22TOF	T399N24TOC	T399N24TOF	T399N26TOC
描述	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element,	Silicon Controlled Rectifier, 1000A I(T)RMS, 399000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element,
厂商名称	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]	EUPEC [eupec GmbH]
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknow
标称电路换相断开时间	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs	150 µs
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
关态电压最小值的临界上升速率	1000 V/us	500 V/us	1000 V/us	500 V/us	1000 V/us	500 V/us	1000 V/us	500 V/us
最大直流栅极触发电流	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
最大直流栅极触发电压	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
JESD-30 代码	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4	O-CEDB-X4
通态非重复峰值电流	7900 A	7900 A	7900 A	7900 A	7900 A	7900 A	7900 A	7900 A
元件数量	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	4
最大通态电流	399000 A	399000 A	399000 A	399000 A	399000 A	399000 A	399000 A	399000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	1000 A	1000 A	1000 A	1000 A	1000 A	1000 A	1000 A	1000 A
断态重复峰值电压	2600 V	2000 V	2000 V	2200 V	2200 V	2400 V	2400 V	2600 V
重复峰值反向电压	2600 V	2000 V	2000 V	2200 V	2200 V	2400 V	2400 V	2600 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	END	END	END	END	END	END	END	END
触发设备类型	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR

T399N26TOF

T399N26TOF概述

T399N26TOF规格参数

T399N26TOF相似产品对比

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