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GT28F160C3TD70

产品描述2M X 16 FLASH 3V PROM, 110 ns, PBGA47
产品类别存储   
文件大小680KB,共68页
制造商Intel(英特尔)
官网地址http://www.intel.com/
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GT28F160C3TD70概述

2M X 16 FLASH 3V PROM, 110 ns, PBGA47

2M × 16 FLASH 3V 可编程只读存储器, 110 ns, PBGA47

GT28F160C3TD70规格参数

参数名称属性值
功能数量1
端子数量47
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压3.3 V
最小供电/工作电压2.7 V
额定供电电压3 V
最大存取时间110 ns
加工封装描述MICRO, BGA-47
状态TRANSFERRED
包装形状RECTANGULAR
包装尺寸GRID ARRAY, VERY THIN PROFILE, FINE PITCH
表面贴装Yes
端子形式BALL
端子间距0.7500 mm
端子位置BOTTOM
包装材料PLASTIC/EPOXY
温度等级INDUSTRIAL
内存宽度16
组织2M X 16
存储密度3.36E7 deg
操作模式ASYNCHRONOUS
位数2.10E6 words
位数2M
内存IC类型FLASH 3V PROM
串行并行PARALLEL

文档预览

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Intel
£
Advanced+ Boot Block Flash
Memory (C3)
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V– 3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
High Performance
— 2.7 V– 3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus
Data Storage
— Eight 4 Kword Blocks, Top or Bottom
Parameter Boot
— Up to One Hundred-Twenty-Seven 32
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
Low Power Consumption
— 9 mA Typical Read
— 7 A Typical Standby with Automatic
Power Savings Feature (APS)
Extended Temperature Operation
— –40 °C to +85 °C
128-bit Protection Register
— 64 bit Unique Device Identifier
— 64 bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Software
— Intel
®
Flash Data Integrator (FDI)
— Supports Top or Bottom Boot Storage,
Streaming Data (e.g., voice)
— Intel Basic Command Set
— Common Flash Interface (CFI)
Standard Surface Mount Packaging
— 48-Ball
µBGA*/VFBGA
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VIII (0.13
µm)
Flash
Technology
— 16, 32 Mbit
ETOX™ VII (0.18
µm)
Flash Technology
— 16, 32, 64 Mbit
ETOX™ VI (0.25
µm)
Flash Technology
— 8, 16 and 32 Mbit
The Intel
®
Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest
0.13
µm
and 0.18
µm
technologies, represents a feature-rich solution for low-power applications.
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-
speed, low-power operation. Flexible block locking allows any block to be independently locked
or unlocked. Add to this the Intel
®
Flash Data Integrator (FDI) software and you have a cost-
effective, flexible, monolithic code plus data storage solution. Intel
®
Advanced+ Boot Block Flash
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA
packages. Additional information on this product family can be obtained by accessing the Intel
®
Flash website: http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290645-017
October 2003

 
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