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GT28F160C3TA110

产品描述2M X 16 FLASH 3V PROM, 110 ns, PBGA47
产品类别存储    存储   
文件大小680KB,共68页
制造商Intel(英特尔)
官网地址http://www.intel.com/
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GT28F160C3TA110概述

2M X 16 FLASH 3V PROM, 110 ns, PBGA47

2M × 16 FLASH 3V 可编程只读存储器, 110 ns, PBGA47

GT28F160C3TA110规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Intel(英特尔)
零件包装代码BGA
包装说明MICRO, BGA-46
针数46
Reach Compliance Codeunknow
ECCN代码EAR99
Is SamacsysN
最长访问时间110 ns
其他特性USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询NO
JESD-30 代码R-PBGA-B46
JESD-609代码e0
长度7.286 mm
内存密度16777216 bi
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,31
端子数量46
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA46,6X8,30
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行PARALLEL
电源1.8/3.3,3/3.3 V
编程电压3 V
认证状态Not Qualified
座面最大高度1 mm
部门规模4K,32K
最大待机电流0.000005 A
最大压摆率0.055 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
切换位NO
类型NOR TYPE
宽度6.964 mm
Base Number Matches1

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Intel
£
Advanced+ Boot Block Flash
Memory (C3)
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V– 3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
High Performance
— 2.7 V– 3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus
Data Storage
— Eight 4 Kword Blocks, Top or Bottom
Parameter Boot
— Up to One Hundred-Twenty-Seven 32
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
Low Power Consumption
— 9 mA Typical Read
— 7 A Typical Standby with Automatic
Power Savings Feature (APS)
Extended Temperature Operation
— –40 °C to +85 °C
128-bit Protection Register
— 64 bit Unique Device Identifier
— 64 bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Software
— Intel
®
Flash Data Integrator (FDI)
— Supports Top or Bottom Boot Storage,
Streaming Data (e.g., voice)
— Intel Basic Command Set
— Common Flash Interface (CFI)
Standard Surface Mount Packaging
— 48-Ball
µBGA*/VFBGA
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VIII (0.13
µm)
Flash
Technology
— 16, 32 Mbit
ETOX™ VII (0.18
µm)
Flash Technology
— 16, 32, 64 Mbit
ETOX™ VI (0.25
µm)
Flash Technology
— 8, 16 and 32 Mbit
The Intel
®
Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest
0.13
µm
and 0.18
µm
technologies, represents a feature-rich solution for low-power applications.
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-
speed, low-power operation. Flexible block locking allows any block to be independently locked
or unlocked. Add to this the Intel
®
Flash Data Integrator (FDI) software and you have a cost-
effective, flexible, monolithic code plus data storage solution. Intel
®
Advanced+ Boot Block Flash
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA
packages. Additional information on this product family can be obtained by accessing the Intel
®
Flash website: http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290645-017
October 2003

 
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