SSM3K131TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K131TU
○
High-Speed Switching Applications
•
•
4.5-V drive
Low ON-resistance : R
on
= 41.5 mΩ (max) (@V
GS
= 4.5 V)
: R
on
= 27.6 mΩ (max) (@V
GS
= 10 V)
0.65±0.05
Unit: mm
2.1±0.1
1.7±0.1
+0.1
0.3 -0.05
3
0.166±0.05
1: Gate
2: Source
3: Drain
Typ.
⎯
⎯
⎯
⎯
⎯
23.0
20.5
27.0
450
120
77
10.1
7.6
2.5
21
15
-0.85
Max
⎯
⎯
1
±0.1
2.5
⎯
27.6
41.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
ns
V
nC
pF
Unit
V
μA
μA
V
S
mΩ
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
I
D
Symbol
V
DSS
V
GSS
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
Drain power dissipation
P
D
(Note 3)
t = 10 s
Channel temperature
Storage temperature range
T
ch
T
stg
Rating
30
±20
6.0
12.0
800
500
1000
150
−55
to 150
°C
°C
mW
Unit
V
V
2.0±0.1
1
2
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
JEDEC
―
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
JEITA
―
Please design the appropriate reliability upon reviewing the Toshiba
TOSHIBA
2-2U1A
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
Weight: 6.6mg (typ.)
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
2
Note 2: Mounted on a ceramic board. (25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm )
2
Note 3: Mounted on an FR4 board. (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm )
Note:
UFM
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 15 V, I
D
= 6.0 A
V
GS
= 10 V
V
DD
=
15 V, I
D
=
2.0 A,
V
GS
=
0 to 4.5 V, R
G
=
10
Ω
I
D
=
-6.0 A, V
GS
=
0 V
(Note 4)
V
DS
=
15 V, V
GS
=
0 V, f
=
1 MHz
Test Conditions
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
-20 V
V
DS
=
30 V, V
GS
=
0 V
V
GS
= ±
20 V, V
DS
=
0 V
V
DS
=
5 V, I
D
=
1 mA
V
DS
=
5 V, I
D
=
4 A
I
D
=
4.0 A, V
GS
=
10 V
I
D
=
2.0 A, V
GS
=
4.5 V
(Note 4)
(Note 4)
(Note 4)
Min
30
15
⎯
⎯
1.3
11.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Drain-Source forward voltage
Note 4: Pulse test
Start of commercial production
0.7±0.05
A
2008-09
1
2014-03-01
SSM3K131TU
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
OUT
IN
R
G
4.5 V
10%
90%
4.5 V
0
10
μs
0V
(c) V
OUT
V
DD
V
DD
10%
90%
t
r
t
on
t
f
t
off
V
DD
=
15 V
R
G
=
10
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DS (ON)
Marking
3
Equivalent Circuit
(top view)
3
KKJ
1
2
1
2
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to be low (1 mA for the
SSM3K131TU). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
2
2014-03-01
SSM3K131TU
R
th
– t
w
Transient thermal impedance R
th
(°C/W)
600
1000
c
b
100
a
P
D
– T
a
a: Mounted on ceramic board
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
b: Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Drain power dissipation P
D
(mW)
800
a
600
b
400
10
Single pulse
a: Mounted on ceramic board
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
b: Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
c: Mounted on FR4 Board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad : 0.36 mm
2
×3)
200
1
0.001
0.01
0.1
1
10
100
600
0
-40
-20
0
20
40
60
80
100
120 140
160
Pulse Width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2014-03-01
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
