SMD Glass Passivated Bridge Rectifiers
GBU8005-G Thru. GBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
-Rating to 1000V PRV
-Surge overload rating - 200 amperes peak.
-Ideal for printed circuit board
-Reliable low cost construction utilizing
molded plastic technique
-Plastic material has underwriters laboratory
flammability classification 94V-0
0.752(19.1)
0.720(18.3)
0.073(1.85)
0.057(1.45)
+
GB
U
AC
806
-
GBU
0.437(11.1)
0.430(10.9)
0.874(22.2)
0.860(21.8)
0.161(4.1)
0.134(3.4)
0.126(3.2)*45
°
0.139(3.53)
0.133(3.37)
Chamfer
0.232(5.90)
0.213(5.40)
0.401(10.2)
0.392(9.80)
Mechanical Data
-Polarit:As marked on Body
-Mounting position:Any
0.720(18.29)
0.680(17.27)
0.047(1.2)
0.035(0.9)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.100(2.54)
0.085(2.16)
0.080(2.03)
0.065(1.65)
0.106(2.7)
0.091(2.3)
0.022(0.56)
0.018(0.46)
0.210(5.3)
0.190(4.8)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
Symbol
GBU
8005-G
50
35
50
GBU
801-G
100
70
100
GBU
802-G
200
140
200
GBU
804-G
400
280
400
8.0
3.2
200
1.1
10.0
500
166
60
2.2
-55 to +150
-55 to +150
GBU
806-G
600
420
600
GBU
808-G
800
560
800
GBU
810-G
1000
700
1000
Unit
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
Maximum Forward Voltage Drop
Per Bridge Element at 4.0A Peak
Maximum Reverse Current
At Rate DC Blocking Voltage
I T Rating for Fusing(t<8.3ms)
Typical Junction Capacitandce Per Element
(Note 1)
T
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
2
I
FSM
V
F
@T
J
=25°C
@T
J
=125°C
I
R
It
C
J
R
θJA
T
J
T
STG
2
A
V
μA
°C/W
pF
°C/W
°C
°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
REV:A
QW-BBR54
Page 1
Comchip Technology CO., LTD.
SMD Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (GBU8005-G Thru. GBU810-G)
Fig.1 - Forward Current Derating Curve
10.0
T
J
=125
O
C
Fig.2 - Maximum NON-Repetitive
Surge Current
Peak Forward Surge Current, (A)
WITH HEAT SINK
Average Forward Current, (A)
200
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
8.0
150
6.0
4.0
WITHOUT HEAT SINK
100
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOADS
50
0.0
0
50
100
150
0
1
10
100
Case Temperature, (°C)
Number Of Cycle At 60Hz
Fig.3 - Typical Junction Capacitance
1000
10.0
Fig.4 - Typical Forward Characteristics
100
Instantaneous Forward Current, (A)
Cap Acitance, (pF)
1.0
50
0.1
O
T
J
=25°C
C
Pulse width: 300us
O
T
J
=25°C,f=1MHz
C
0
0.01
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Reverse Voltage, (V)
Instantaneous Forward Voltage, (V)
Fig.5 - Typical Reverse Characteristics
1000
Instantaneous Reverse Currnet, (μA)
O
T
J
=125°C
C
100
O
T
J
=100°C
C
10
O
T
J
=50°C
C
1.0
O
T
J
=25°C
C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage, (%)
REV: A
QW-BBR54
Page 2
Comchip Technology CO., LTD.
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