SEMICONDUCTOR
GBPC15
RoHS
RoHS
N
ell
High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 15A
GBPC1506 Thru GBPC1512
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
Glass passivated chips
GBPC-W
GBPC
~
~
+
-
+
-
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances,
office equipment, industrial automation applications.
~
~
MECHANICAL DATA
Case:
GBPC, GBPC-W
Epoxy meets UL 94 V-O flammability rating
Terminals:
Nickel plated on faston lugs or silver plated on
wire leads,solderable per J-STD-002 and
JESD22-B102. Suffix letter “W” added to
indicate wire leads(e.g. GBPC1506W).
Polarity:
As marked,positive lead by belevled corner
Mounting Torque:
20 inches-lbs. max. (M5 screw)
Weight:
14g (0.49 ozs)
+
~
~
-
GBPC-W
Hole for
#10
Screw
0.220 (5.59)
DIA.
0.200 (5.08)
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.24 (6.0)
0.18 (4.6)
Hole for
#10
Screw
0.220 (5.59)
DIA.
0.200 (5.08)
GBPC
1.135 (28.8)
1.115 (28.3)
0.672 (17.1)
0.632 (16.1)
AC
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.030 (0.76)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
0.582 (14.8)
0.542 (13.8)
0.24 (6.0)
0.18 (4.6)
0.042 (1.07)
0.038 (0.97)
DIA.
0.470 (11.9)
0.430 (10.9)
0.50 (12.7)
0.44 (11.7)
1.25
(31.8)
MIN.
0.034 (0.86)
0.030 (0.76)
0.25
(6.35)
0.310 (7.62)
0.290 (7.36)
0.310 (7.62)
0.290 (7.36)
0.840 (21.3)
0.740 (18.8)
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Page 1 of 4
SEMICONDUCTOR
GBPC15
RoHS
RoHS
N
ell
High Power Products
PRIMARY CHARACTERRISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J max.
15A
600V to 1200V
300A
5
µA
1.1V
150ºC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
GBPC15
PARAMETER
SYMBOL
UNIT
06
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I
2
t
V
ISO
T
J
,T
STG
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
08
800
560
800
15
300
10
1000
700
1000
12
1200
840
1200
V
V
V
A
A
600
420
600
375
2500
-55
to 150
A
2
s
V
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
GBPC15
SYMBOL
V
F
I
R
C
J
06
08
1.1
5
500
300
10
12
UNIT
V
µA
pF
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diode
Typical junction capacitance per diode
I
F
= 7.5A
T
A
= 25°C
T
A
= 150°C
4V, 1MHz
THERMAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
GBPC15
SYMBOL
UNIT
06
08
1.4
10
12
°C/W
Typical thermal resistance
R
θJC
(1)
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
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Page 2 of 4
SEMICONDUCTOR
GBPC15
RoHS
RoHS
N
ell
High Power Products
Fig.1 Maximum output rectified current
40
35
40
35
Fig.2 Maximum output rectified current
Average forward current
(A)
Average forward current
(A)
60 HZ
Resistive or
lnductive Load
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
60 HZ
Resistive or
lnductive Load
Bridges Mounted on
5
x4x3”
AL, Finned Plate
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90
100
GBPC15
R
thSA
= 0.5 °C/W
Case temperature
(°C)
Ambient temperature
(°C)
Fig.3 Maximum power dissipation
80
Fig.4 Maximum non-repetitive peak forward
surge current per diode
Average power dissipation of bridge
(W)
1000
Peak forward surge current (A)
Capacitive Load
T
J
= T
J
Max.
0.5 ms Single Sine-Wave
70
60
50
40
30
20
10
T
J
= T
J
Max.
100
Resistive or
Inductive Load
1.0 Cycle
0
0
10
20
30
40
10
1
10
Number of Cycles at 60 Hz
100
Average output current (A)
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Page 3 of 4
SEMICONDUCTOR
GBPC15
RoHS
RoHS
N
ell
High Power Products
Fig.5 Typical Instantaneous forward
characteristics per diode
100
1000
Fig.6 Typical reveres leakage characteristics
per diode
Instantaneous forward current
(A)
T
A
= 150°C
T
A
= 150°C
Instantaneous reverse leakage
current (µA)
100
T
A
= 125°C
10
T
A
= 125°C
T
A
= 100°C
10
1
T
A
= 100°C
T
A
= 25°C
1
T
A
= 25°C
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.1
0
10
20
30
40
50
60
70
80
90 100
Instantaneous forward voltage (V)
Percent of rated peak reverse voltage (%)
Fig.7 Typical junction capacitance per diode
1,000
T
J
= 25°C
Fig.8 Typical transient thermal lmpedance
per diode
1,000
T
J
= 25°C
Junction capacitance
(pF)
f = 1.0 MHZ
V
sig
= 50mVp-p
Transient thermal lmpedance (°CW)
f = 1.0 MHZ
V
sig
= 50mVp-p
100
100
10
10
1
10
Reverse v oltage (V)
100
1
0.01
0.1
1
10
100
t, Heating
time (sec.)
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Page 4 of 4
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