DATA SHEET
SEMICONDUCTOR
GBJ6005 THRU GBJ610
6.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 170A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component
Index, File Number E94661
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
Dim
A
B
C
D
GBJ
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
L
K
A
B
M
_
J
H
I
S
P
C
R
N
E
G
H
I
J
K
L
D
3.0 X 45°
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Weight:
6.6 grams (approx)
•Marking:
Type Number
G
E
E
M
N
P
R
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ
6005
50
35
GBJ
601
100
70
GBJ
602
200
140
GBJ
604
400
280
6.0
150
1.0
5.0
500
120
55
1.8
-55 to +150
GBJ
606
600
420
GBJ
608
800
560
GBJ
610
1000
700
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 110℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF = 3.0A
@TC = 25℃
@ TC = 125℃
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IR
I2t
Cj
R_JC
Tj, TSTG
Unit
V
V
A
A
V
μ
A
A2s
pF
℃/W
℃
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
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DEVICE CHARACTERISTICS
GBJ6005 THRU GBJ610
FORWARD SURGE CURRENT, AMPERES pk
(HALF SINE-WAVE)
AVERAGE FORWARD CURRENT
AMPERES
6.0
HEAT-SINK
MOUNTING, T
C
(4 x 4 x 0.15cm)THK
COPPER PLATE
175
140
4.0
105
2.0
MOUNTED ON PC BOARD,
TA 0.5 (12.7mm)LEAD LENGTH
60Hz RESISTIVE OR INDUCTIVE LOAD
70
35
0
0
50
100
O
150
0
1
2
6
10
20
40
60
100
CASE TEMPERATURE, C
NO. OF CYCLES AT 60Hz
Fig.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
Fig.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10
INSTANTANEOUS FORWARD CURRENT, AMPERES
4
100
40
20
10
4.0
2.0
1.0
10
3
REVERSE CURRENT,uA
10
2
T
J
=150 C
O
10
1
10
0
T
J
=25 C
O
10
-1
0.4
0.2
0.1
0.7
0.8
0.9
1.0
1.1
TJ=25 C
Pulse Width = 300us
1% DULY Cycle
O
10
-2
0
10
20
30
40
50
60
70
80
90
100 110
1.2
1.3
1.4
PERCENT OF PEAK REVERE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3 - TYPICAL REVERSE CHARACTERISTICS
Fig.4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER ELEMENT
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