DATA SHEET
SEMICONDUCTOR
GBJ20005 THRU GBJ2010
20A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 240A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component
Index, File Number E94661
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
Dim
A
GBJ
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
L
K
A
B
M
B
C
D
E
_
J
H
I
S
P
C
R
N
G
H
D
I
J
K
L
M
3.0 X 45°
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Weight:
6.6 grams (approx)
•Marking:
Type Number
G
E
E
N
P
R
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 100℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF =10A
@TC = 25℃
@ TC = 125℃
VFM
IR
I2t
Cj
R_JC
Tj, TSTG
1.05
10
500
240
60
0.8
-65 to +150
V
IFSM
240
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
35
70
140
280
20
420
560
700
V
A
50
100
200
400
600
800
1000
V
GBJ
20005
GBJ
2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
GBJ
2010
Unit
μ
A
A2s
pF
℃/W
℃
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
http://www.yeashin.com
1
REV.02 20120305
DEVICE CHARACTERISTICS
GBJ20005 THRU GBJ2010
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
25
100
I
O
, AVERAGE RECTIFIED CURRENT (A)
20
With heatsink
10
15
1.0
10
5
Without heatsink
Resistive or
Inductive load
0.1
T
j
= 25°C
Pulse width = 300µs
0
25
50
75
100
125
150
0.01
0
0.4
0.8
1.2
1.6
2.0
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
250
T
j
= 25°C
100
T
j
= 25°C
f = 1MHz
200
150
C
j
, JUNCTION CAPACITANCE (pF)
Single half-sine-wave
(JEDEC method)
10
100
50
0
1
10
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
1000
100
T
j
= 125°C
T
j
= 100°C
10
1.0
T
j
= 50°C
T
j
= 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
http://www.yeashin.com
2
REV.02 20120305
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
