SEMICONDUCTOR
GBJ15
RoHS
RoHS
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 15A
GBJ1504 Thru GBJ1512
3.6±0.1
30±0.3
3.2
±0.
2
11.2±0.2
4.6±0.1
2.5±0.2
+
2.2±0.2
~
~
4±0.2
5±0.2
60
°±
5°
2.7±0.1
1±0.1
0.65±0.05
10±0.2
7.5±0.2
7.5±0.2
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
+
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
~
~
PRIMARY CHARACTERRISTICS
I
F(AV)
V
RRM
I
15A
400V to 1200V
240A
5
µ
A
1.10V
150ºC
ADVANTAGE
FSM
International standard package
I
R
Epoxy meets UL 94 V-O flammability rating
V
F
Small volume, light weight
T
J max.
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force
Weight: 6.5g (0.23 ozs)
www.nellsemi.com
Page 1 of 3
0.5±0.1
0.5±0.1
17.5±0.2
20±0.3
SEMICONDUCTOR
GBJ15
RoHS
RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
GBJ15
PARAMETER
SYMBOL
UNIT
04
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current, T
c
= 85
°
C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
06
600
700
600
08
800
900
800
15
240
10
1000
1100
1000
12
1200
1300
1200
V
V
V
A
A
400
500
400
239
2500
-40
to 150
-40
to 150
A
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F
= 7.5A
T
A
= 25
°
C
T
A
= 150
°
C
GBJ15
SYMBOL
UNIT
04
V
F
I
R
06
08
1.10
5
500
10
12
V
µA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
THERMAL AND MECHANICAC (T
A
= 25°C unless otherwise noted)
GBJ15
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
04
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
06
08
1.0
10
12
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
R
θJC
(1)
to heatsink M3
0.8
Nm
Approximate weight
6.5
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Device code
GBJ
15
10
3
1
2
3
-
-
-
Product type : “GBJ” Package,1
Bridge
I
F(AV)
rating :
"15"
for
15
A
Voltage code : code x 100 =
V
RRM
www.nellsemi.com
Page 2 of 3
SEMICONDUCTOR
GBJ15
RoHS
RoHS
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
25
300
Average forward output current, amperes (A)
Average output current, amperes (A)
20
240
T
J
= 25°C
15
180
10
120
5
60
0
0
50
100
150
0
1
10
Number of cycles at 50H
z
100
Ambient temperature (°C)
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
Instantaneous reverse output micro, amperes ( A)
100
100
10
°C
Instantaneous forward current, amperes (A)
T
J
=
100
10
1.0
1.0
0.1
5°C
T
J
= 25°C
T
J
= 2
0.01
0
20
40
60
80
100
120
140
0.1
0
0.2
0.6
1.0
1.4
1.8
Percent of rated peak reverse voltage (%)
Forward voltage (v)
www.nellsemi.com
Page 3 of 3
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