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GBJ1004

产品描述10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小361KB,共2页
制造商YEA SHIN TECHNOLOGY CO.,LTD
官网地址http://www.yeashin.com/
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GBJ1004概述

10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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DATA SHEET
SEMICONDUCTOR
GBJ10005 THRU GBJ1010
10A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 170A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component
Index, File Number E94661
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
Dim
A
GBJ
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
L
K
A
B
M
B
C
D
E
_
J
H
I
S
P
C
R
N
G
H
D
I
J
K
L
M
3.0 X 45°
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Weight:
6.6 grams (approx.)
•Marking:
Type Number
G
E
E
N
P
R
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25_C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ TC= 100℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF = 5.0A
Peak Reverse Current @TC = 25℃
at Rated DC Blocking Voltage @ TC = 125℃
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
VFM
IR
I2t
Cj
R_JC
Tj, TSTG
1.05
10
500
120
55
1.4
-55 to +150
V
IFSM
170
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
35
70
140
280
10
420
560
700
V
A
50
100
200
400
600
800
1000
V
GBJ
10005
GBJ
1001
GBJ
1002
GBJ
1004
GBJ
1006
GBJ
1008
GBJ
1010
Unit
μ
A
A2s
pF
℃/W
http://www.yeashin.com
1
REV.02 20120305

GBJ1004相似产品对比

GBJ1004 GBJ10005 GBJ1001 GBJ1002 GBJ1006 GBJ1008 GBJ1010
描述 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

 
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