VS-GB70NA60UF
www.vishay.com
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low V
CE(on)
• FRED Pt
®
hyperfast rectifier
SOT-227
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
typical at 70 A, 25 °C
I
F
DC
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
P
D
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
W
236
132
2500
V
V
A
UNITS
V
Power dissipation, diode
RMS isolation voltage
P
D
V
ISOL
Revision: 01-Feb-12
Document Number: 93103
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB70NA60UF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 35 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 70 A
V
GE
= 15 V, I
C
= 35 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 70 A, T
J
= 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Diode reverse breakdown voltage
V
GE(th)
V
GE(th)
/T
J
I
CES
V
BR
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
I
R
= 1 mA
I
C
= 35 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
C
= 70 A, V
GE
= 0 V
I
C
= 35 A, V
GE
= 0 V, T
J
= 125 °C
I
C
= 70 A, V
GE
= 0 V, T
J
= 125 °C
Diode reverse leakage current
Gate to emitter leakage current
I
RM
I
GES
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
GE
= ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.69
2.23
2.07
2.89
3.9
-9
1
0.07
-
1.80
2.13
1.35
1.70
0.1
0.02
-
MAX.
-
1.88
2.44
2.31
3.21
5
-
100
2.0
-
2.33
2.71
1.81
2.32
50
3
± 200
μA
mA
nA
V
mV/°C
μA
mA
V
V
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
T
J
= 150 °C, I
C
= 120 A, R
g
= 22
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V
-
-
-
-
-
-
59
4
118
130
11
715
93
6
279
159
13
995
ns
A
nC
ns
A
nC
Fullsquare
I
C
= 70 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
I
C
= 70 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
I
C
= 50 A, V
CC
= 400 V, V
GE
= 15 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
1.15
1.16
2.31
1.27
1.28
2.55
208
69
208
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
nC
UNITS
Revision: 01-Feb-12
Document Number: 93103
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB70NA60UF
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
IGBT
Thermal resistance, junction to case
Diode
Thermal resistance, case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
R
thJC
R
thCS
SYMBOL
T
J
, T
Stg
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.05
-
30
MAX.
150
0.28
0.53
-
1.3
-
Nm
g
°C/W
UNITS
°C
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
200
175
150
125
T
J
= 25 °C
I
C
(A)
100
75
50
25
0
0
1
2
3
T
J
= 125 °C
4
5
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
V
CE
(V)
Fig. 3 - Typical IGBT Collector Current Characteristics
1000
1
100
0.1
T
J
= 125 °C
10
I
CES
(mA)
I
C
(A)
0.01
1
0.001
0.1
T
J
= 25 °C
0.01
1
10
100
1000
0.0001
100
200
300
400
500
600
V
CE
(V)
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
V
CES
(V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 01-Feb-12
Document Number: 93103
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB70NA60UF
www.vishay.com
Vishay Semiconductors
200
4.5
T
J
= 25 °C
175
150
4.0
V
geth
(V)
3.5
125
I
F
(A)
100
T
J
= 125 °C
75
50
T
J
= 25 °C
3.0
T
J
= 125 °C
2.5
25
2.0
0.0002
0
0.0004
0.0006
0.0008
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
C
(mA)
Fig. 5 - Typical IGBT Threshold Voltage
V
FM
(V)
Fig. 8 - Typical Diode Forward Characteristics
4
1.50
1.25
100 A
Energy (mJ)
3
1.00
0.75
0.50
E
off
0.25
E
on
V
CE
(V)
70 A
2
35 A
1
10
30
50
70
90
110
130
150
0.00
0
20
40
60
80
T
J
(°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
I
C
(A)
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V
1000
Allowable Case Temperature (°C)
160
140
Switching Time (ns)
120
100
80
60
40
20
0
0
20
40
60
80
100
120
t
d(off)
t
f
100
t
d(on)
t
r
10
0
10
20
30
40
50
60
70
80
I
F
- Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs. Case Temperature
I
C
(A)
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V
Revision: 01-Feb-12
Document Number: 93103
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB70NA60UF
www.vishay.com
Vishay Semiconductors
30
25
170
145
T
J
= 125 °C
120
20
t
rr
(ns)
I
rr
(A)
T
J
= 125 °C
15
10
5
0
100
T
J
= 25 °C
95
70
45
20
100
T
J
= 25 °C
1000
1000
dI
F
/dt (A/µs)
Fig. 11 - Typical t
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
dI
F
/dt (A/µs)
Fig. 12 - Typical I
rr
Diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
1250
1050
T
J
= 125 °C
850
Q
rr
(nC)
650
450
250
50
100
T
J
= 25 °C
1000
dI
F
/dt (A/µs)
Fig. 13 - Typical Q
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 14 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Revision: 01-Feb-12
Document Number: 93103
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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