SMART
Features
•
•
•
•
•
•
•
•
•
•
•
®
SM536084002P3UU
December 13, 1996
Modular Technologies
32MByte (8M x 36) DRAM Module - 4Mx4 based
72-pin SIMM
Standard
:
JEDEC
Configuration
:
Parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM
Operating Voltage :
5.0V
Refresh
:
2K
Device Physicals
:
300mil SOJ
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x1.250"
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
Functional Diagram
CAS1#
CAS0#
RAS0#
4Mx9
Block
4Mx9
Block
4Mx9
Block
4Mx9
Block
CAS2#
CAS3#
RAS2#
RAS1#
4Mx9
Block
DQ0~DQ8
4Mx9
Block
DQ9~DQ17
4Mx9
Block
DQ18~DQ26
4Mx9
Block
DQ27~DQ35
RAS3#
DQ0~DQ35
Notes : 1.
2.
3.
4.
A0~A10 to all DRAMs.
WE# to all DRAMs.
OE# of all DRAMs is grounded.
Each 4Mx9 Block comprises of two 4Mx4 and
one 4Mx1 DRAMs for parity.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A10
DQ0~DQ35
RAS0#~RAS3#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM536084002P3UU
December 13, 1996
Modular Technologies
Pin
No.
Row and Column Addresses
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
RAS3#
RAS2#
DQ26
DQ8
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ17
DQ35
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
RAS1#
NC
WE#
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
70ns
80ns
NC
NC
V
SS
V
SS
V
SS
NC
NC
V
SS
Pin
PD1
PD2
PD3
PD4
60ns
NC
V
SS
NC
NC
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM536084002P3UU
December 13, 1996
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
Vcc=5.0V
- 1.0 to +7.0
24
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS0#~RAS3#)
Input Capacitance (CAS0#~CAS3#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ35)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
CI1
C
I2
C
I3
C
I4
C
I/O
Max
125
47
47
125
19
Unit
pF
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
Vcc=5.0V
Typ
5.0
0
-
-
Unit
Max
5.5
0
V
CC
+1.0
0.8
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM536084002P3UU
December 13, 1996
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
60ns
70ns
80ns
Min Max Min Max Min Max
-240 240 -240 240 -240 240
-20
20 -20
20
-20 20
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
Unit
µ
A
µ
A
V
V
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
1124
Max.
70ns
1004
Unit
80ns
884
mA
Note
1, 2
48
48
48
mA
Standby Current
I
CC2
24
1124
1124
884
24
1004
1004
764
24
884
884
644
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
Notes:
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
®
SM536084002P3UU
December 13, 1996
Modular Technologies
AC Characteristics
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Symbol
60ns
Min
Max
70ns
Min
Max
80ns
Min
Max
Unit Notes
Common to Read and Write Cycles
Column address set-up time
Row address set-up time
Column address hold time
CAS# pulse width
CAS# to output in Low-Z
CAS# to RAS# precharge time
CAS# hold time
RAS# to column address delay time
Row address hold time
RAS# pulse width
Random read/write cycle time
RAS# to CAS# delay time
RAS# precharge time
RAS# hold time
Transition time (rise and fall)
Read Cycle
Access time from column address
Access time from CAS#
Output buffer turn-off delay
Access time from RAS#
Column address to RAS# lead time
Read command hold time referenced to CAS#
Read command set-up time
Read command hold time referenced to RAS#
Write Cycle
Write command to CAS# lead time
Data-in hold time
Data-in set-up time
Write command to RAS# lead time
Write command hold time
Write command set-up time
Write command pulse width
t
ASC
t
ASR
t
CAH
t
CAS
t
CLZ
t
CRP
t
CSH
t
RAD
t
RAH
t
RAS
t
RC
t
RCD
t
RP
t
RSH
t
T
t
AA
t
CAC
t
OFF
t
RAC
t
RAL
t
RCH
t
RCS
t
RRH
t
CWL
t
DH
t
DS
t
RWL
t
WCH
t
WCS
t
WP
0
0
10
15
0
5
60
15
10
60
110
20
40
15
3
-
-
0
-
30
0
0
0
15
10
0
15
10
0
10
-
-
-
10000
-
-
-
30
-
10000
-
45
-
-
50
30
15
15
60
-
-
-
-
-
-
-
-
-
-
-
0
0
15
20
0
5
70
15
10
70
130
20
50
20
3
-
-
0
-
35
0
0
0
20
15
0
20
15
0
15
-
-
-
10000
-
-
-
35
-
10000
-
50
-
-
50
35
20
15
70
-
-
-
-
-
-
-
-
-
-
-
0
0
15
20
0
5
80
15
10
80
150
20
60
20
3
-
-
0
-
40
0
0
0
20
15
0
20
15
0
15
-
-
-
10000
-
-
-
40
-
10000
-
60
-
-
50
40
20
15
80
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
10
4
2
3, 10
3, 4, 5
6
3, 4
8
8
9
9
7
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
