SMART
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
4MByte (1M x 32) DRAM Module - 1Mx4 based
72-pin SODIMM
Features
•
•
•
•
•
•
•
•
•
•
•
Standard
:
JEDEC (FPM only)
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K
Device Physicals
:
300mil TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
2.350" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP- 177827-1 (3.3V,
AMP- 177827-2 (3.3V,
AMP- 177827-3 (5.0V,
AMP- 177827-4 (5.0V,
Part Numbers
SM532014001XSUU
SM532014011XSUU
SM532014081XSUU
SM532014091XSUU
:
:
:
:
FPM,
FPM,
EDO,
EDO,
5.0V
3.3V
5.0V
3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320130UUXSUU :
Gold)
Tin)
Gold)
Tin)
1Mx32,
1Mx16 based.
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
RAS0#
1Mx8
Block
DQ0~DQ7
1Mx8
Block
DQ8~DQ15
1Mx8
Block
DQ16~DQ23
1Mx8
Block
DQ24~DQ31
RAS2#
DQ0 ~ DQ31
Notes: 1.
2.
3.
4.
OEs# of all DRAMs are grounded.
WE# to all DRAMs.
A0~A9 to all DRAMs.
Each 1Mx8 block comprises of two 1Mx4 DRAMs.
V
CC
V
SS
Decoupling capacitors
to all devices.
(All specifications of this device are subject to change without notice.)
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A9
DQ0~DQ31
RAS0#, RAS2#
CAS0#~CAS3#
WE#
PD1~PD7
V
CC
V
SS
NC
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
Pin
No.
Row and Column Addresses
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin
Designation
V
SS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
NC
DQ8
DQ10
DQ12
DQ14
NC
A8
NC
DQ15
DQ16
V
SS
CAS2#
CAS1#
NC
WE#
DQ18
DQ20
DQ22
NC
DQ25
DQ28
V
CC
DQ30
NC
PD3
PD5
PD7
Pin
No.
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin
Designation
DQ0
DQ2
DQ4
DQ6
V
CC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
V
CC
A9
RAS2#
NC
DQ17
CAS0#
CAS3#
RAS0#
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
V
SS
Presence Detect Pins
Access Time
60ns
70ns
NC
NC
V
SS
V
SS
V
SS
V
SS
NC
NC
NC
V
SS
NC
NC
NC
NC
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
80ns
NC
V
SS
V
SS
NC
NC
V
SS
NC
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
DC Characteristics
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
8
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
8
0 to +70
- 55 to +150
50
Unit
V
W
°C
°C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Vcc=3.3V
Min
Typ
Max
3.0
3.3
3.6
0
0
0
2.0
-
V
CC
+0.3
-0.3
-
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
0
0
2.4
-
V
CC
+1.0
-1.0
-
0.8
Unit
V
V
V
V
Capacitance
(V
CC
= 3.3V±10%/5.0V±10%, T
A
= +25°C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#)
Input Capacitance (CAS#)
Input Capacitance (WE#)
Input/Output Capacitance (Data)
Notes:
Symbol
C
I1
C
I2
C
I3
C
I4
C
I/O
Max
45
33
20
60
12
Unit
pF
pF
pF
pF
pF
Capacitance is sampled per Mil-Std-883.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤V
out
≤
V
CC
Dout = Disable
High I
out
= -2mA
Low I
out
= 2mA
60ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
70ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
80ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤V
out
≤
V
CC
Dout = Disable
High I
out
= -5mA
Low I
out
= 4.2mA
60ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
70ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
80ns
Min
Max
-80
80
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
DC Characteristics (cont’d)
FPM-based Module
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Symbol
Test Conditions
Operating Current
I
CC1
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
480
Max.
70ns
440
Unit
80ns
400
mA
Note
1, 2
16
16
16
mA
Standby Current
I
CC2
8
480
480
360
8
440
440
320
8
400
400
280
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Symbol
Test Conditions
Operating Current
I
CC1
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
600
Max.
70ns
520
Unit
80ns
440
mA
Note
1, 2
16
16
16
mA
Standby Current
I
CC2
8
600
600
440
8
520
520
360
8
440
440
280
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open
condition.
2. Address can be changed once or less while RAS
#
= V
IL
.
3. Address can be changed once or less while CAS
#
= V
IH
.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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