OTP ROM, 512X8, CMOS, CDIP24
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | General Electric Solid State |
| 包装说明 | DIP, DIP24,.6 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 最长访问时间 | 600 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDIP-T24 |
| JESD-609代码 | e0 |
| 内存密度 | 4096 bi |
| 内存集成电路类型 | OTP ROM |
| 内存宽度 | 8 |
| 端子数量 | 24 |
| 字数 | 512 words |
| 字数代码 | 512 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 512X8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP24,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 最大待机电流 | 0.00004 A |
| 最大压摆率 | 0.006 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| IM6654MJG/883B | IM6653-1IJG/BI | IM6654MJG/B | IM6654AMJG/HR | IM6654-1IJG/BI | IM6653AMJG/HR | IM6653MJG | IM6654AMJG | IM6654AMJG/883C | IM6654AMJG/B | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | OTP ROM, 512X8, CMOS, CDIP24 | OTP ROM, 1KX4, CMOS, CDIP24 | OTP ROM, 512X8, CMOS, CDIP24 | OTP ROM, 512X8, CMOS, CDIP24 | OTP ROM, 512X8, CMOS, CDIP24 | OTP ROM, 1KX4, CMOS, CDIP24, | OTP ROM, 1KX4, CMOS, CDIP24, | OTP ROM, 512X8, CMOS, CDIP24, | OTP ROM, 512X8, CMOS, CDIP24 | OTP ROM, 512X8, CMOS, CDIP24 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State |
| 包装说明 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknow | unknow | unknow | unknow | unknow |
| 最长访问时间 | 600 ns | 450 ns | 600 ns | 350 ns | 450 ns | 350 ns | 600 ns | 350 ns | 350 ns | 350 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4096 bi | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bi | 4096 bi | 4096 bi | 4096 bi | 4096 bi |
| 内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
| 内存宽度 | 8 | 4 | 8 | 8 | 8 | 4 | 4 | 8 | 8 | 8 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 512 words | 1024 words | 512 words | 512 words | 512 words | 1024 words | 1024 words | 512 words | 512 words | 512 words |
| 字数代码 | 512 | 1000 | 512 | 512 | 512 | 1000 | 1000 | 512 | 512 | 512 |
| 最高工作温度 | 125 °C | 85 °C | 125 °C | 125 °C | 85 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -40 °C | -55 °C | -55 °C | -40 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 512X8 | 1KX4 | 512X8 | 512X8 | 512X8 | 1KX4 | 1KX4 | 512X8 | 512X8 | 512X8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 最大待机电流 | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A | 0.00004 A |
| 最大压摆率 | 0.006 mA | 0.006 mA | 0.006 mA | 0.012 mA | 0.006 mA | 0.012 mA | 0.006 mA | 0.012 mA | 0.012 mA | 0.012 mA |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | INDUSTRIAL | MILITARY | MILITARY | INDUSTRIAL | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 电源 | 5 V | - | 5 V | 5/10 V | 5 V | - | - | 5/10 V | 5/10 V | 5/10 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | MIL-STD-883 Class B (Modified) | - | MIL-STD-883 Class B (Modified) | - | - | MIL-STD-883 Class C | 38535Q/M;38534H;883B |
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