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FR306

产品描述3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27
产品类别半导体    分立半导体   
文件大小280KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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FR306概述

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27

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FR301 THRU FR307
Features
· Fast switching
· Low leakage
· Low forward voltage drop
· High current capability
· High current surge
· High reliability
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.18 gram
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length at T
A
=75℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A
Maximum DC reverse
current at rated DC
blocking voltage
T
A
=25℃
T
A
=55℃
Trr
C
J
T
J
T
STG
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
FR
301
50
35
50
FR
302
100
70
100
FR
303
200
140
200
FR
304
400
280
400
3.0
200
1.3
10
150
FR
305
600
420
600
FR
306
800
560
800
FR
307
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
250
500
ns
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
150
65
-65 to +150
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

FR306相似产品对比

FR306 FR307
描述 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

 
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