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FR105G

产品描述1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小281KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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FR105G概述

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

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FR101G THRU FR107G
Features
· Fast switching
· Low leakage
· Low forward voltage drop
· High current capability
· Glass passivated junction
· High reliability capability
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
1.0(25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=55℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum DC reverse current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
T
L
=55℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
FR
101G
50
35
50
FR
102G
100
70
100
FR
103G
200
140
200
FR
104G
400
280
400
1.0
30.0
1.3
5.0
FR
105G
600
420
600
FR
106G
800
560
800
FR
107G
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
100
Trr
C
J
T
J
T
STG
150
15.0
-65 to +175
250
500
ns
pF
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

FR105G相似产品对比

FR105G FR106G FR107G FR102G FR103G
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 current 1.0 ampere voltage 50 to 1000 volts current 1.0 ampere voltage 50 to 1000 volts

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