74V2G14
TRIPLE SCHMITT INVERTER
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.0ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
= 25°C
TYPICAL HYSTERESIS:
V
H
= 800mV at V
CC
= 4.5V
V
H
= 500mV at V
CC
= 3.0V
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
II
OH
| = I
OL
= 4mA (MIN) at V
CC
= 3.0V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-8L
ORDER CODES
PACKAGE
SOT23-8L
74V2G14STR
DESCRIPTION
The 74V2G14 is an advanced high-speed CMOS
TRIPLE
SCHMITT
TRIGGER INVERTER
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage.
Pin configuration and function are the same as
those of the 74V2G04, but 74V2G14 has
hysteresis on inputs.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
et
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o
P
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od
r
s)
t(
uc
T&R
June 2003
1/8
74V2G14
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 3, 6
7, 5, 2
4
8
SYMBOL
1A, 2A, 3A
1Y, 2Y, 3Y
GND
V
CC
NAME QND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
nA
L
H
nY
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage (see note 1)
DC Output Voltage (see note 2)
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) Vcc=0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
Supply Voltage
Input Voltage
Parameter
Value
2 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
Unit
V
V
V
V
°C
b
O
so
T
op
te
le
Output Voltage
Output Voltage
r
P
uc
od
s)
t(
so
b
-O
te
le
r
P
-0.5 to V
CC
+ 0.5
−
20
−
20
±
25
±
50
-65 to +150
260
od
s)
t(
uc
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
Operating Temperature
2/8
74V2G14
CAPACITANCE CHARACTERISTICS
Test Condition
Symbol
Parameter
Min.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
T
A
= 25°C
Typ.
4
12
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/3
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
C
L
= 50pF
V
IL
= 0V, V
IH
= 3.3V
Value
T
A
= 25 °C
Min.
V
OLP
V
OLV
Dynamic Low Level Quiet Out-
put (note 1)
5.0
-0.8
1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.
TEST CIRCUIT
O
C
L
= 15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Max.
0.8
Unit
V
4/8
NXP MCU
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