FLM5964-35F
C-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=45.5dBm(Typ.)
・High
Gain: G1dB=9.0dB(Typ.)
・High
PAE:
ηadd=36%(Typ.)
・Broad
Band: 5.9~6.4GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM5964-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
Symbol
V
DS
V
GS
P
T
T
s t g
T
ch
Rating
15
-5
115
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Sym bol
V
DS
I
GF
I
GR
Condition
RG=10
Ω
RG=10
Ω
Lim it
≤
10
≤
108
≥
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Distortion
Sym bol
I
DSS
g
m
V
p
V
GSO
P
1d B
G
1d B
I
d s r
η
ad d
∆
G
IM
3
Condition
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
VDS=10V
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50 ohm
f=6.4 GHz
∆
f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
Channel to Case
10V x IDS(DC) X R
th
Min.
-
-
-0.5
-5.0
45.0
8.0
-
-
-
-38
-
-
Lim it
Typ.
16
16
-1.5
-
45.5
9.0
8.5
36
-
-40
Max.
-
-
-3.0
-
-
-
9.5
-
1.2
-
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
R
th
Therm al Resistance
∆
T
ch
Channel Tem perature Rise
CASE STYLE : IK
ESD
Class III
2000V
~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
o
1.1
1.3
C/W
o
-
100
C
G.C.P.:Gain Compression Point
Edition 1.3
September 2004
1
FLM5964-35F
C-Band Internally Matched FET
Power Derating Curve
140
Total Power Dissipation (W)
Output Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC), F=6.15GHz
49
47
Output Power (dBm)
45
43
41
39
37
35
33
24
26
28
30
32
34
36
38
40
42
P.A.E
80
Power Added Efficiency (%)
70
60
Pout
50
40
30
20
10
0
Input Power (dBm)
120
100
80
60
40
20
0
0
50
100
150
200
Case Temperature (
℃
)
Output Power vs. Frequency
VDS=10V, IDS(DC)=8A
IMD vs. Output Power
VDS =10V, IDS (DC)=8A
f1=6.40GHz, f2=6.41GHz
48
46
Output Power (dBm)
44
42
40
38
36
34
5.7 5.8
5.9
6
6.1
6.2 6.3 6.4
6.5 6.6
Frequency (GHz)
Pin=26dBm
Pin=30dBm
Pin=41dBm
P1dB
IMD (dBc)
-25
-30
-35
-40
-45
-50
-55
-60
30 31 32 33 34
35 36 37 38 39 40
O utput Power (S.C.L.) (dBm)
S.C.L. :Single Carria Level
IM5
IM3
Pin=34dBm
2
FLM5964-35F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do
not put these products into the mouth.
・Do
not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe
government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
5
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