74LVC1G11
Single 3-input AND gate
Rev. 01 — 30 November 2004
Product data sheet
1. General description
The 74LVC1G11 is a high-performance, low-voltage, Si-gate CMOS device and superior
to most advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of
this device in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
off
. The I
off
circuitry
disables the output, preventing the damaging backflow current through the device when
it is powered down.
Schmitt-trigger action at all inputs makes the circuit highly tolerant to slower input rise and
fall times.
The 74LVC1G11 provides a single 3-input AND gate.
2. Features
s
s
s
s
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
x
JESD8-7 (1.65 V to 1.95 V)
x
JESD8-5 (2.3 V to 2.7 V)
x
JESD8-B/JESD36 (2.7 V to 3.6 V).
±24
mA output drive (V
CC
= 3.0 V)
ESD protection:
x
HBM EIA/JESD22-A114-B exceeds 2000 V
x
MM EIA/JESD22-A115-A exceeds 200 V.
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Multiple package options
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
s
s
s
s
s
s
s
Philips Semiconductors
74LVC1G11
Single 3-input AND gate
3. Quick reference data
Table 1:
Quick reference data
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
2.5 ns.
Symbol
Parameter
Conditions
Min
1.0
-
V
CC
= 3.3 V
[1] [2]
Typ
2.6
4
13
Max
4.3
-
-
Unit
ns
pF
pF
t
PHL
, t
PLH
propagation delay A, C
L
= 50 pF; V
CC
= 3.3 V
B and C to Y
C
I
C
PD
[1]
input capacitance
power dissipation
capacitance
-
C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
The condition is V
I
= GND to V
CC
.
[2]
4. Ordering information
Table 2:
Ordering information
Package
Temperature range Name
74LVC1G11GW
74LVC1G11GV
−40 °C
to +125
°C
−40 °C
to +125
°C
SC-88
SC-74
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT363
SOT457
Type number
5. Marking
Table 3:
Marking
Marking code
VU
V11
Type number
74LVC1G11GW
74LVC1G11GV
6. Functional diagram
&
1
1
3
6
A
B
C
001aac033
Y
4
3
6
4
001aac029
Fig 1. Logic symbol
Fig 2. IEC logic symbol
9397 750 14209
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2004
2 of 14
Philips Semiconductors
74LVC1G11
Single 3-input AND gate
A
B
Y
C
001aac030
Fig 3. Logic diagram
7. Pinning information
7.1 Pinning
A
GND
1
2
6
C
V
CC
Y
11
5
B
3
001aac032
4
Fig 4. Pin configuration
7.2 Pin description
Table 4:
Symbol
A
GND
B
Y
V
CC
C
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data input
9397 750 14209
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2004
3 of 14
Philips Semiconductors
74LVC1G11
Single 3-input AND gate
8. Functional description
8.1 Function table
Table 5:
Input
A
H
L
X
X
[1]
Function table
[1]
Output
B
H
X
L
X
C
H
X
X
L
Y
H
L
L
L
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
9. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
output voltage
input diode current
output diode current
Conditions
[1]
Min
−0.5
−0.5
−0.5
−0.5
-
-
-
-
−65
Max
+6.5
+6.5
+6.5
−50
±50
±50
±100
+150
250
Unit
V
V
V
mA
mA
mA
mA
°C
mW
active mode
Power-down mode
V
I
< 0 V
V
O
> V
CC
or V
O
< 0 V
[1] [2]
[1] [2]
V
CC
+ 0.5 V
output source or sink V
O
= 0 V to V
CC
current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40 °C
to +125
°C
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
9397 750 14209
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2004
4 of 14
Philips Semiconductors
74LVC1G11
Single 3-input AND gate
10. Recommended operating conditions
Table 7:
Symbol
V
CC
V
I
V
O
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
active mode
Power-down mode;
V
CC
= 0 V
T
amb
t
r
, t
f
ambient temperature
input rise and fall times
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Conditions
Min
1.65
0
0
0
−40
0
0
Typ
-
-
-
-
-
-
-
Max
5.5
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
V
°C
ns/V
ns/V
11. Static characteristics
Table 8:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
[1]
V
IH
HIGH-level input voltage V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
−100 µA;
V
CC
= 1.65 V to 5.5 V
I
O
=
−4
mA; V
CC
= 1.65 V
I
O
=
−8
mA; V
CC
= 2.3 V
I
O
=
−12
mA; V
CC
= 2.7 V
I
O
=
−24
mA; V
CC
= 3.0 V
I
O
=
−32
mA; V
CC
= 4.5 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 100
µA;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
LI
I
off
9397 750 14209
Conditions
Min
Typ
Max
-
-
-
-
0.7
0.8
0.3
×
V
CC
-
-
-
-
-
-
0.10
0.45
0.30
0.40
0.55
0.55
±5
±10
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
0.65
×
V
CC
-
1.7
2.0
0.7
×
V
CC
-
-
-
-
V
CC
−
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.54
2.15
2.50
2.62
4.11
-
0.07
0.12
0.17
0.33
0.39
±0.1
±0.1
0.35
×
V
CC
V
input leakage current
power-off leakage
current
V
I
= 5.5 V or GND; V
CC
= 5.5 V
V
I
or V
O
= 5.5 V; V
CC
= 0 V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2004
5 of 14
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