PIN Photodiode
FEATURES
• Data rates up to 2.5 Gb/s
• High Quantum Efficiency: 0.8A/W at 1,310nm
• Low dark current: 0.1nA
• Photosensitive area: 50µm diameter
• Wide spectral response range: 900nm to 1,600nm
FID3Z1KX/LX
KX
APPLICATIONS
• Optical transmission system: STM-1 (OC-3),
STM-4 (OC-12) or STM-16 (OC-48) short haul.
LX
DESCRIPTION
The FID3Z1KX/LX is a PIN photodiode with a multimode
fiber pigtail designed for use in local area network, subscriber
loop and high bit-rate tranmission system applications up to 2.5 Gb/s
at both 1,310nm and 1,550nm wavelength. The PIN chip has a
photosensitivity area diameter of 50µm with a planar structure and
guard ring for high reliability. A multimode fiber is aligned to the
hermetically sealed PIN diode. The optical alignment system has the
high coupling stability.
Edition 1.1
July 2004
1
FID3Z1KX/LX
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Storage Temperature
Operating Case Temperature
Forward Current
Reverse Current
Reverse Voltage
Symbol
Tstg
Top
IF
IR
VR
Ratings
-40 to +90
-40 to +85
5
2.0
20
PIN Photodiode
Unit
°C
°C
mA
mA
V
OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=25°C)
Parameter
Responsivity
Symbol
R
Conditions
VR=1V, 1300nm
VR=1V, 1500nm
Variation of Responsivity
∆R
VR=1V, -20 to +70°C
VR=1V,-40 to +85°C
VR=5V, Ta=25°C
Dark Current
ID
VR=5V, Ta=70°C
VR=5V, Ta=85°C
Cut-off Frequency
Capacitance
Optical Return Loss
fc
Ct
ORL
RL=50Ω, VR=5V
-3dB from 500 kHz
f=1MHz, VR=5V
Limits
Min.
0.75
0.8
-
-
-
-
-
2.5
-
30
Max.
-
-
±3
±4
1
10
20
-
0.9
Unit
A/W
A/W
%
%
nA
nA
nA
GHz
pF
dB
-
Note 1: Optical characteristics are specified on the condition that single mode fiber is used as the
optical source for testing.
2
PIN Photodiode
Fig. 1 Spectral Response (η vs.
λ)
100
Ta = 25°C
VR = 1V
Quantum Efficiency,
η
(%)
80
Responsivity, R(A/W)
0.5
1.0
FID3Z1KX/LX
Fig. 2 Spectral Response (R vs.λ)
Ta = 25°C
VR = 1V
60
40
20
0.1
0
600
800
1000
1200
1400
1600
1800
600
800
1000
1200
1400
1600
1800
Wavelength,
λ
(nm)
Fig. 3 Temperature Dependence of Responsivity
10-8
Normalized Responsivity,
∆R/R
(25°C) (%)
λ
= 1,310nm
VR = 1V
4
10-9
Wavelength,
λ
(nm)
Fig. 4 Dark Current vs. Reverse Voltage
Ta = 85°C
Dark Current, ID (A)
2
Ta = 25°C
10-10
0
-2
10-11
Ta = -40°C
10-12
-4
-6
-40
-20
0
20
40
60
80
10-13
0
10
Reverse Voltage, VR (V)
20
Temperature, Ta (°C)
3
FID3Z1KX/LX
Fig. 5 Dark Current vs. Temperature
10-8
10-9
Response (dB)
0
-3
-6
-9
10-12
-12
2
10-13
-40 -20
0
20
40 60 80
10
10-10
10-11
VR=5V
PIN Photodiode
Fig. 6 Frequency Response
Dark Current, ID (A)
Ta = 25°C
VR=5V
RL = 50Ω
λ =
1,310nm
102
Frequency (MHz)
103
Temperature, Ta (°C)
Fig. 7 Capacitance vs. Reverse Voltage
10
Ta=25°C
f=1 MHz
Capacitance, Ct (pF)
1
0.1
0.2
0.5 1
5 10
50
Reverse Voltage, VR (V)
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
