Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3
参数名称 | 属性值 |
厂商名称 | Diodes Incorporated |
零件包装代码 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-W3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | FAST |
最大集电极电流 (IC) | 0.32 A |
集电极-发射极最大电压 | 500 V |
配置 | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码 | O-PBCY-W3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 125 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | MATTE TIN |
端子形式 | WIRE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | POWER CONTROL |
晶体管元件材料 | SILICON |
ZCN9150ASTOA | ZCN9150ASTOE | ZCN9150ASTOF | ZCN9150ASTZ | ZCN9150ASTOB | |
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描述 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
针数 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
其他特性 | FAST | FAST | FAST | FAST | FAST |
最大集电极电流 (IC) | 0.32 A | 0.32 A | 0.32 A | 0.32 A | 0.32 A |
集电极-发射极最大电压 | 500 V | 500 V | 500 V | 500 V | 500 V |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
JESD-609代码 | e3 | e3 | e3 | e3 | e3 |
湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子面层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 |
晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
厂商名称 | Diodes Incorporated | - | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
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