SUR481H
Absolute maximum ratings
(Tr1, Tr2)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
(Ta=25°C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Ratings
Tr1
50
50
10
100
150
150
-55 ~ 150
Tr2
-50
-50
-5
-100
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Tr1 : NPN)
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
(Ta=25°C)
°
Symbol
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
*
R
1
Test Condition
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
-
Min. Typ. Max.
-
-
120
-
-
-
-
-
-
0.1
250
4.7
500
500
-
0.3
-
-
Unit
nA
nA
-
V
MHz
KΩ
* : Characteristic of Transistor Only
Electrical Characteristics
(Tr2 : PNP)
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
(Ta=25°C)
°
Symbol
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
*
R
1
Test Condition
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-10V, I
C
=-5mA
-
Min. Typ. Max.
-
-
120
-
-
-
-
-
-
-0.1
250
4.7
-500
-500
-
-0.3
-
-
Unit
nA
nA
-
V
MHz
KΩ
* : Characteristic of Transistor Only
KST-5002-000
2