Semiconductor
SUT483J
NPN/PNP Epitaxial Planar Silicon Transistor
Description
•
General purpose transistor
Feature
•
Both 2SA1980 chip and 2SC5343 chip in SOT-363 package
Ordering Information
Type NO.
SUT483J
Marking
3X
Package Code
SOT-363
Outline Dimensions
unit :
mm
2.1 BSC
1.25 BSC
1
2
0.15~0.30
6
1.30 BSC
5
4
2.0 BSC
3
2
1
3
Tr2
Tr1
4
5
6
0.25 Min.
PIN Connections
1. Emitter 1
2. Base 1
3. Collector 2
4. Emitter 2
5. Base 2
6. Collector 1
0.8~1.0
0~0.1
0.1~0.25
KST-6001-004
1
SUT483J
Absolute maximum ratings
(Tr1, Tr2)
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
Tr1
Tr2
60
50
5
150
150
150
-55~150
-50
-50
-5
-150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Tr1 : NPN)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
60
50
5
-
-
70
-
80
-
-
-
-
-
-
-
-
-
2
-
-
-
0.1
0.1
700
0.25
-
3.5
Unit
V
V
V
µA
µA
-
V
MHz
pF
Electrical Characteristics
(Tr2 : PNP)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA,
f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-50
-50
-5
-
-
120
-
80
-
-
-
-
-
-
-
-
-
4
-
-
-
-0.1
-0.1
400
-0.3
-
7
Unit
V
V
V
µA
µA
-
V
MHz
pF
KST-6001-004
2
SUT483J
Electrical Characteristic Curves
Tr1 : NPN
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
Tr2 : PNP
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
KST-6001-004
3
SUT483J
Electrical Characteristic Curves
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
KST-6001-004
4
SUT483J
These AUK products are intended for usage in general electronic equipments(Office and
communication equipment, measuring equipment, domestic electrification, etc.).
Please make sure that you consult with us before you use these AUK products in equipm-
ents which require high quality and/or reliability, and in equipments which could have
major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic
signal, combustion central, all types of safety device, etc.).
AUK cannot accept liability to any damage which may occur in case these AUK products
were used in the mentioned equipments without prior consultation with AUK.
KST-6001-004
5
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