1N4001 thru 1N4007
Vishay Semiconductors
formerly General Semiconductor
General Purpose Plastic Rectifier
DO-204AL
(DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
Reverse Voltage
50 to 1000V
Forward Current
1.0A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Construction utilizes void-free molded plastic technique
• Low reverse leakage
• High forward surge capability
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
0.205 (5.2)
0.160 (4.1)
Mechanical Data
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
Case:
JEDEC DO-204AL, molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
0.023 (0.58)
for suffix "E" part numbers
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 75°C
* Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) T
A
= 75°C
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length T
L
= 75°C
Typical thermal resistance
(1)
* Maximum DC blocking voltage temperature
* Operating junction and storage temperature range
Symb.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
θJA
R
θJL
T
A
T
J
, T
STG
1N
4001
50
35
50
Ratings at 25°C ambient temperature unless otherwise specified.
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1.0
30
30
50
25
+150
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
Unit
V
V
V
A
A
µA
°C/W
V
°C
–50 to +175
Electrical Characteristics
* Maximum DC reverse current
at rated DC blocking voltage
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A
T
A
= 25°C
T
A
= 125°C
V
F
I
R
C
J
1.1
5.0
50
15
*JEDEC registered values
V
µA
pF
Typical junction capacitance at 4.0V, 1MHz
Note:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88503
13-Jan-03
www.vishay.com
1
1N4001 thru 1N4007
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current Derating Curve
1.0
30
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
A
= 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
60H
Z
Resistive or
Inductive Load
0.8
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pads
0.6
25
20
0.4
15
0.2
0.375" (9.5mm)
Lead Length
0
0
25
50
75
100
125
150
175
10
5.0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
20
1,000
Fig. 4 – Typical Reverse Characteristics
Instantaneous Reverse Current (µA)
T
J
= 150°C
100
Instantaneous Forward Current (A)
10
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
10
T
J
= 100°C
1
T
J
= 25°C
0.1
0.1
0.01
0.6
0.01
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percentage of Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
100
Fig. 6 – Typical Transient Thermal
Impedance
Transient Thermal Impedance (°C/W)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
10
1
1
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t -- Pulse Duration (sec)
www.vishay.com
2
Document Number 88503
13-Jan-03
嵌入式系统
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