VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Features
• Rise Times Less Than 30ps
• High-Speed Operation
(Up to 10.7Gb/s NRZ Data)
• Differential Inputs
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
• Single-Supply
• CML-Compatible Data Inputs
• On-Chip 50Ω Input Terminations
• 50Ω Output Impedance
General Description
The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with
direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components
allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50Ω.
Applications
• SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s
VSC7991 Block Diagram
60Ω
(1)
60Ω
(1)
50Ω
(1)
DIN
50Ω
(1)
NDOUT
DOUT
300Ω
(1)
NDIN
DCC
Note: (1) On-die components.
VIP
IMOD
300Ω
(1)
IB
IBN
IP
G52321-0, Rev 2.1
12/11/00
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
AC Characteristics
(Over recommended operating conditions)
Table 1: High Speed Inputs /Outputs
Symbol
IRL
ORL
Parameter
Input Return Loss
,
50Ω System
Output Return Loss, 50Ω System
Min
Typ
−15
−12
Max
Units
dB
dB
Conditions
50MHz to 10GHz
50MHz to 10GHz
Table 2: Laser Driver AC Electrical Specifications
Symbol
t
R
t
F
Jitter
Parameter
Output Rise and Fall Times
Output Jitter
Overshoot/Undershoot
Duty-Cycle
Min
Typ
Max
30
10
+10
+25
Units
ps
ps/p-p
%
%
Conditions
50Ω load, 20% to 80%, V
MOD
= 3V
50Ω Load, V
MOD
= 3V
DCC in the range of V
SS
−
0.5V to V
SS
+2V
−10
−25
DC Characteristics
(Over recommended operating conditions)
Table 3: Power Dissipation
Symbol
I
VSS
P
D
Parameter
Power Supply Current (V
SS
)
Total Power Dissipation
Min
Typ
Max
300
2040
Units
mA
mW
Conditions
V
SS
=
−6.8,
R
L
= 50Ω to GND,
I
MOD
= 120mA, V
BIAS
= 0V
V
SS
=
−6.8,
R
L
= 50Ω to GND
I
MOD
= 120mA, V
BIAS
= 0V
Table 4: Laser Driver DC Electrical Specifications
Symbol
V
BIAS
V
MOD
V
OCM
IB, IBN
V
IP
V
IH
V
IL
V
SW(1)
DCC
Parameter
Programmable Output Offset Voltage
Modulation Voltage Amplitude
Output Voltage Compliance
Laser Bias Control Voltage
Laser Modulation Control Voltage
Input High Voltage
Input Low Voltage
Input Voltage Swing
Duty-Cycle Control
Min
−0.8
1.5
Typ
Max
0
3
0
V
SS
+
0.7
0
−0.60
1000
V
SS
+
2V
Units
V
V
V
V
V
mV
V
mVp-p
Conditions
−10
V
SS
−150
−1.00
450
V
SS
−
0.5V
4
NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin.
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52321-0, Rev 2.1
12/11/00
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Absolute Maximum Ratings
(1)
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Negative Power Supply Voltage (V
SS
).............................................................................................. V
CC
to
−8.0V
All Pins ................................................................................................................................................V
SS
to + .5V
Supply Voltage (V
SS
) ......................................................................................................................................... 8V
Supply Current (I
SS
) .................................................................................................................................... 500mA
Input Voltage (V
IN
)........................................................................................................................................
−2.0V
Output Voltage (V
OUT
).................................................................................................................................
−4.0V
Modulation Control Voltage (V
IP
).........................................................................................................V
SS
−
0.5V
Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V
Output Offset Control Current (I
IB
) .............................................................................................................. 50mA
Maximum Junction Temperature Range
..................................................................................... −55°C
to +125°C
Storage Temperature Range:
....................................................................................................... −55°C
to +125°C
Note:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND) .............................................................................................................................. 0V
Negative Voltage Rail (V
SS
)...........................................................................................................
−6.5V
to
−7.2V
Operational Case Temperature (T
C1
) ...................................................................................................0°C to 75°C
G52321-0, Rev 2.1
12/11/00
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
Page 4
2354µm (0.0927")
GND
Pad 37
GND
Pad 1
DINB
Pad 2
GND
Pad 3
GND
Pad 4
GND
Pad 5
GND
Pad 6
GND
Pad 7
DIN
Pad 8
GND
Pad 9
IP
Pad 21
GND
Pad 20
VIP
Pad 19
VIP
Pad 18
VSS
Pad 17
VSS
Pad 16
VSS
Pad 15
VSS
Pad 14
VDUT
Pad 13
GND
Pad 12
GND
Pad 11
NC
Pad 10
GND
Pad 38
GND
Pad 39
GND
Pad 40
GND
Pad 41
VSS
Pad 42
VSS
Pad 43
VSS
Pad 44
VSS
Pad 45
GND
Pad 46
GND
Pad 47
GND
Pad 48
IB1
Pad 34
IB18
Pad 35
GND
Pad 36
GND
Pad 33
Bare Die Descriptions
IB1
Pad 32
50µm
(0.002")
GND
Pad 31
GND
Pad 30
SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
1754µm
(0.0691")
GND
Pad 29
VSC7991
GND
Pad 28
GND
Pad 27
SEMICONDUCTOR CORPORATION
Figure 1: Pad Assignments
DOUTB
Pad 26
VITESSE
GND
Pad 25
IB1B
Pad 24
IB1B
Pad 23
IP
Pad 22
NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
50µm
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
(0.002")
Advance Product Information
Die Size: 2354µm x 1754µm (0.0927" x 0.0691")
Die Thickness: 381µm (0.015")
Pad Pitch: 150µm (0.0059")
Pad Size: 116µm x 116µm (0.0046" x 0.0046")
Pad Passivation Opening: 100µm x 100µm (0.0039" x 0.0039")
Scribe Size: 50µm (0.002")
VSC7991
G52321-0, Rev 2.1
12/11/00
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Table 5: Pad Coordinates
Pad
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Signal
Name
GND
DINB
GND
GND
GND
GN
GND
DIN
GND
NC
GND
GND
VDUT
VSS
VSS
VSS
VSS
VIP
GND
GND
IP
IP
IB1B
IB1B
Coordinates (µm)
X
2296
2296
2296
2296
2296
2296
2296
2296
2296
2296
2146
1996
1846
1696
1546
1396
1246
1027
808
658
508
358
208
58
Y
1546
1396
1246
1061.5
877
692.5
508
358
208
58
58
58
58
58
58
58
58
58
58
58
58
58
58
58
Pad
Number
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Signal
Name
GND
DOUTB
GND
GND
GND
GND
GND
DOUT
GND
IB1
IB1
GND
GND
GND
GND
GND
GND
VSS
VSS
VSS
VSS
GND
GND
GND
Coordinates (µm)
X
58
58
58
58
58
58
58
58
58
58
208
358
508
658
808
958
1108
1258
1408
1558
1708
1858
2008
2158
Y
208
358
508
692.5
877
1061.5
1246
1396
1546
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
1696
G52321-0, Rev 2.1
12/11/00
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 5
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