TSOP392..CC1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP392..CC1- series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP392..CC1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
20052
Features
• Photo detector and preamplifier in one
package
• Build in filter for carrier frequency of IR
e3
signal
• Shielding against electrical field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Supply voltage range: 2.7 V to 5.5 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Improved immunity against ambient light
• Suitable burst length
≥
10 cycles/burst
Mechanical Data
Pinning:
1 = OUT, 2 = V
S
, 3 = GND
Parts Table
Part
TSOP39230CC1
TSOP39233CC1
TSOP39236CC1
TSOP39237CC1
TSOP39238CC1
TSOP39240CC1
TSOP39256CC1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
16835
Application Circuit
20020
2
30 kΩ
Input
AG
C
Band
Pass
Demo-
dulator
V
S
IR Transmitter
with
TSALxxxx
V
S
+ 2.7
V
... 5.5
V
OUT
1
OUT
3
PIN
Control Circuit
GND
Circuit
µC
V
O
GND
GND
No
external components are required
Document Number 81296
Rev. 1.1, 28-Aug-06
www.vishay.com
1
TSOP392..CC1
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s
(Pin 2)
(Pin 2)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
3
- 0.3 to (V
S
+ 0.3)
10
100
- 25 to + 85
- 25 to + 85
30
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage
Transmission Distance
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 400 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
Test condition
E
v
= 0, V
S
= 3.3 V
E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
2.7
30
Min
1.0
Typ.
1.3
1.4
5.5
Max
1.6
Unit
mA
mA
V
m
Output Voltage Low (Pin 1)
Minimum Irradiance
(30 - 40 kHz)
V
OSL
E
e min
0.4
250
0.6
mV
mW/m
2
Minimum Irradiance
(56 kHz)
E
e min
0.5
0.7
mW/m
2
Minimum Irradiance
(30 - 40 kHz)
E
e min
0.55
0.7
mW/m
2
Minimum Irradiance
(56 kHz)
E
e min
0.65
0.8
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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2
Document Number 81296
Rev. 1.1, 28-Aug-06
TSOP392..CC1
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
1.0
T
on
,T
off
- Output Pulse
Width
(ms)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
= 950 nm,
optical test signal, fig. 3
Toff
Ton
t
t
pi
*
* t
pi
V
O
V
OH
V
OL
t
d1 )
T
10/fo is recommended for optimal function
16110
Output Signal
1)
2)
7/f
0
<
t
d
<
15/f
0
t
pi
- 5/f
0
<
t
po
<
t
pi
+ 6/f
0
t
po2 )
t
16909
10.0 100.0 1000.0 10000.0
E
e
- Irradiance (mW/m²)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
0.9
Output Pulse
E
e min
/E
e
- Rel. Responsivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16925
t
po
- Output Pulse
Width
(ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
= 950 nm,
optical test signal, fig. 1
Input Burst Duration
f = f
0
± 5 %
f (3 dB) = f
0
/10
0.9
1.1
f/f
0
- Relative Frequency
1.3
10.0
100.0 1000.0 10000.0
16908
E
e
- Irradiance (mW/m²)
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
4.0
E
e min
- Threshold Irradiance (mW/m
2
)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Correlation
with
ambient light sources:
10
W/m
2
1.4 klx (Std.illum.A, T= 2855 K)
10
W/m
2
8.2
klx (Daylight, T = 5900 K)
600 µs
T = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94
8134
V
O
V
OH
V
OL
Ambient, = 950 nm
T
on
T
off
t
0.0
0.01
16911
0.10
1.00
10.00
100.00
2
)
E - Ambient DC Irradiance (W/m
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 81296
Rev. 1.1, 28-Aug-06
www.vishay.com
3
TSOP392..CC1
Vishay Semiconductors
0.9
E
e min
- Sensitivity (mW/m
2
)
S ( )
rel
- Relative Spectral Sensitivity
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
S
- Supply
Voltage
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
17185
94
8408
-
Wavelength
(nm)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
0.8
0.7
Max. Envelope Duty Cycle
30°
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
- Relative Transmission Distance
1.0
0.9
0.8
40°
50°
60°
70°
80°
f = 38 kHz, E
e
= 2 mW/m
2
0.7
16913
20
40
60
80
100 120
Burst Length (number of cycles/burst)
19258
Figure 8. Max. Envelope Duty Cycle vs. Burstlength
Figure 11. Horizontal Directivity
ϕ
x
E
e min
- Threshold Irradiance (mW/m²)
0.6
0.5
0.4
Sensitivity in dark ambient
0°
10°
20°
30°
40°
1.0
50°
60°
70°
80°
90
19259
0.3
0.2
0.1
0.9
0.8
0.7
0.0
- 30 - 15 0
15 30 45 60 75
16918
T
amb
- Ambient Temperature (°C)
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
- Relative Transmission Distance
Figure 9. Sensitivity vs. Ambient Temperature
Figure 12. Vertical Directivity
ϕ
y
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Document Number 81296
Rev. 1.1, 28-Aug-06
TSOP392..CC1
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP392..CC1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corres-
ponding gap time is necessary at some point in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP392..CC1 it can still receive the data signal.
However the sensitivity is reduced to such a level that
no unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP392..CC1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 13 or Figure 14).
IR Signal
IR Signal from fluorescent
lamp
with
low modulation
0
16920
5
10
Time (ms)
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp
with
high modulation
IR Signal
0
16921
5
10
Time (ms)
15
20
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
Document Number 81296
Rev. 1.1, 28-Aug-06
www.vishay.com
5
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